• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Gettering and defect engineering in semiconductor technology XVI >Ge and GeSn light emitters on Si
【24h】

Ge and GeSn light emitters on Si

机译：Si上的Ge和GeSn发光体

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The heteroepitaxial growth of GeSn and Ge crystals on Si substrates are investigated for Si-based photonic applications. Light Emitting Diodes with emission wavelengths from 2,100 to 1,550 nm could be demonstrated with active intrinsic GeSn light emitting layers between Ge barriers. A clear shift of the direct band gap toward the infrared beyond 2 µm is measured. Emission intensity is increased compared to Ge Light Emitting Diodes. Room temperature lasing from electrically pumped n-type doped Ge edge emitting devices are demonstrated. The edge emitter is formed by cleaving Si-Ge waveguide heterodiodes, providing optical feedback through a Fabry-Perot resonator. The electroluminescence spectra of the devices showed optical bleaching and intensity gain for wavelengths between 1,660 nm and 1,700 nm.
机译：对于基于Si的光子应用，研究了GeSn和Ge晶体在Si衬底上的异质外延生长。 Ge势垒之间的有源本征GeSn发光层可以证明发光波长为2,100至1,550 nm的发光二极管。测得直接带隙向红外方向的明显偏移超过2 µm。与Ge发光二极管相比，发射强度增加了。演示了由电泵浦n型掺杂的Ge边缘发射器件产生的室温激光。边缘发射器是通过切割Si-Ge波导异质二极管形成的，并通过Fabry-Perot谐振器提供光反馈。器件的电致发光光谱显示出波长在1,660 nm至1,700 nm之间的光漂白和强度增益。

著录项

  • 来源
  • 会议地点 Bad Staffelstein(DE)
  • 作者

    Michael Oehme; Martin Gollhofer; Konrad Kostecki; Roman Koerner; Stefan Bechler; Daniel Widmann; Tzanimr Arguirov; Martin Kittler; Joerg Schulze;

  • 作者单位

    Institute of Semiconductor Engineering, University of Stuttgart,Pfaffenwaldring 47, 70569 Stuttgart, Germany;

    Institute of Semiconductor Engineering, University of Stuttgart,Pfaffenwaldring 47, 70569 Stuttgart, Germany;

    Institute of Semiconductor Engineering, University of Stuttgart,Pfaffenwaldring 47, 70569 Stuttgart, Germany;

    Institute of Semiconductor Engineering, University of Stuttgart,Pfaffenwaldring 47, 70569 Stuttgart, Germany;

    Institute of Semiconductor Engineering, University of Stuttgart,Pfaffenwaldring 47, 70569 Stuttgart, Germany;

    Institute of Semiconductor Engineering, University of Stuttgart,Pfaffenwaldring 47, 70569 Stuttgart, Germany;

    Institut fuer Physik und Chemie, Brandenburgische Technische Universitaet (BTU) Cottbus-Senftenberg, Platz der Deutschen Einheit 1, 03046 Cottbus, Germany;

    Institut fuer Physik und Chemie, Brandenburgische Technische Universitaet (BTU) Cottbus-Senftenberg, Platz der Deutschen Einheit 1, 03046 Cottbus, Germany,Leibniz-lnstitut fuer innovative Mikroelektronik (IHP),Im Technologiepark 25, 15236 Frankfurt (Oder), Germany;

    Institute of Semiconductor Engineering, University of Stuttgart,Pfaffenwaldring 47, 70569 Stuttgart, Germany;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Si Photonics; GeSn; Germanium; electroluminescence; light emitting diode; diode lasers;

    机译：硅光子学; GeSn;锗;电致发光发光二极管;二极管激光器;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号