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首页> 外文会议>Gettering and defect engineering in semiconductor technology XVI >Electrical Characterization and Defect-related Luminescence in Oxygen Implanted Silicon
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Electrical Characterization and Defect-related Luminescence in Oxygen Implanted Silicon

机译：氧注入硅中的电学特征和与缺陷相关的发光

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摘要

Defect structure, electrical properties and defect-related luminescence (DRL) of light emitting diodes (LED) with the active defect-rich region produced by oxygen implantation and a subsequent multistep annealing of silicon wafers were investigated. It was found that defect-rich regions possess an embedded positive charge in both n- and p-type of the samples whose origin was ascribed to oxygen precipitates (OP). The presence of that charge in the implanted region of p-based LED gave rise to the apparent conductivity type conversion and to a significant increase of free electron concentration in n-based LEDs. A significant difference in the shape and in the excitation dependence of luminescence spectra as well as in the properties of DLTS signals was found between p- and n-type samples. From an analysis of the obtained data the DRL band centered at 0.79 eV was ascribed to small OPs segregated at dislocations whose filling with the holes hinders optical transitions via dislocation-related states at 0.805 eV and the broad DRL band at energies higher than 0.81 eV was ascribed to large OPs.
机译：研究了通过氧注入和随后的硅片多步退火产生的具有有源缺陷富集区的发光二极管（LED）的缺陷结构，电性能和与缺陷相关的发光（DRL）。已发现，缺陷丰富的区域在n型和p型样品中均具有嵌入的正电荷，这些样品的来源归因于氧沉淀（OP）。在基于p的LED的注入区域中存在该电荷会导致表观的电导率类型转换，并使基于n的LED中的自由电子浓度显着增加。在p型和n型样品之间发现了发光光谱的形状和激发依赖性以及DLTS信号的性质上的显着差异。通过对获得的数据进行分析，将以0.79 eV为中心的DRL带归因于位错处的小OP，这些孔填充了空穴，从而通过与位错相关的状态在0.805 eV处阻碍了光跃迁，而在高于0.81 eV的能量处的宽DRL带为归因于大型OP。

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