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Parameters of substrates-single crystals of ZnTe and Cd_1-xZn_xTe(x<0.25), obtained by physical vapor transport technique (PVT)

机译:通过物理气相传输技术(PVT)获得的ZnTe和Cd_1-xZn_xTe(x <0.25)的单晶衬底参数

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It is shown that very high quality (in particular - very good real crystal structure) of the single crystals of ZnTe and Cd_1-xZn_xTe, intended to be substrates for MBE and other techniques of epitaxy, can be reached by an optimized physical vapor transport (PVT) technique. The obtained crystals are twin-free, the narrowness of the rocking curve nearly reaches the theoretical limit and the density of dislocations is low. The results of characterization of the crystals are presented. direct c 1999 Elsevier Science B.V. All rights reserved.
机译:结果表明,通过优化的物理气相传输可以达到ZnTe和Cd_1-xZn_xTe单晶的高质量(特别是非常好的真实晶体结构),这些晶体打算用作MBE和其他外延技术的衬底。 PVT)技术。所获得的晶体是无孪晶的,摇摆曲线的窄度几乎达到理论极限,位错密度低。给出了晶体表征的结果。直接c 1999 Elsevier Science B.V.保留所有权利。

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