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首页> 外文会议>High-Power Diode Laser Technology and Applications IV >Effect of compressive and tensile strain on the performance of 808 nm QW High Power Laser diodes
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Effect of compressive and tensile strain on the performance of 808 nm QW High Power Laser diodes

机译：压缩和拉伸应变对808 nm QW大功率激光二极管性能的影响

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The effect of compressive and tensile strain of Quantum Wells (QWs) on the gain and transparency current density of high power laser diodes was studied. Material composition of InGaAlAs/AlGaAs and InGaAsP/InGaP was utilized for the study of compressive and tensile strain QWs, respectively. Variation in the strain degree was achieved by changing the In and P mole fraction accordingly. We found that the transparency current densities of compressively strained QWs decrease from 117 to 100 A/cm~2 as a function of strain. The transparency current in tensile strained QWs decrease from 140 to 130 A/cm~2 as the strain is increased. The material gain of compressively strained QWs is almost insensitive to the variation of strain degree (～1000 cm~(-1)), while for tensile strained QWs the material gain increases from 1000 cm~(-1) to 1250 cm~(-1) when the tensile strain is increased. In spite of the higher transparency densities the gain achieved at maximum strain is larger for tensile strained QW laser. This result is explained by the strain influence on the electron-hole recombination strengths. Consequently the effect of strain on the performance of High Power QCW and CW laser bars was also investigated. The threshold current of bars with compressively strained QWs is decreased to 8.5 A and the external differential efficiency is increased to 1.0 W/A as a function of strain. On the other hand, as the tensile strain in the QW is increased the threshold current reduces to 10 A and the slope efficiency increases to 1.2 W/A. As a result, tensile strain QWs bars are more efficient at high power operation.
机译：研究了量子阱的压缩和拉伸应变对高功率激光二极管的增益和透明电流密度的影响。 InGaAlAs / AlGaAs和InGaAsP / InGaP的材料成分分别用于研究压缩应变和拉伸应变QW。通过相应地改变In和P的摩尔分数来实现应变程度的变化。我们发现，压缩应变的量子阱的透明电流密度随应变从117降低到100 A / cm〜2。拉伸应变的QWs中的透明电流随着应变的增加而从140降低到130 A / cm〜2。压缩应变的量子阱的材料增益对应变程度的变化几乎不敏感（〜1000 cm〜（-1）），而拉伸应变的量子阱的材料增益从1000 cm〜（-1）增加到1250 cm〜（- 1）当拉伸应变增加时。尽管透明密度较高，但拉伸应变QW激光器在最大应变下获得的增益更大。该结果由应变对电子-空穴复合强度的影响来解释。因此，还研究了应变对高功率QCW和CW激光棒性能的影响。具有压缩应变QW的钢筋的阈值电流降低到8.5 A，外部差分效率根据应变增加到1.0 W / A。另一方面，随着QW中的拉伸应变增加，阈值电流减小到10 A，斜率效率增加到1.2 W / A。结果，在高功率操作下，拉伸应变QWs棒更加有效。

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