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首页> 外文会议>High-Speed Electronics and Optoelectronics >Thin film transfer of InAlAs/InGaAs MSM photodetector or InGaAsP lasers onto GaAs or Si substrates
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Thin film transfer of InAlAs/InGaAs MSM photodetector or InGaAsP lasers onto GaAs or Si substrates

机译：InAlAs / InGaAs MSM光电探测器或InGaAsP激光器的薄膜转移到GaAs或Si衬底上

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Abstract: We have demonstrated the fabrication of two structures achieved by the thin film transfer technique: back-illuminated InAlAs/InGaAs metal-semiconductor-metal (MSM) detectors with buried interdigitated fingers on GaAs substrates; and long wavelength InGaAsP lasers on GaAs or Si substrates. For optoelectronic system applications, one often considers the use of a single material system for both the optical and electronic components on the chip, because it is not complicated by lattice mismatch. Compared to epitaxial growth of lattice-mismatched material systems, such as GaAs on Si, the thin film transfer technique does not result in a substantial number of misfit dislocations which can adversely affect device performance. The results we obtained demonstrate the feasibility of the thin film transfer process and point to the potential integration of OEICs and other components fabricated from a variety of materials on a common host substrate.!3
机译：摘要：我们已经证明了通过薄膜转移技术实现的两种结构的制造：背照式InAlAs / InGaAs金属-半导体-金属（MSM）检测器，其在GaAs衬底上具有埋指指状结构； GaAs或Si基板上的长波长InGaAsP激光器。对于光电系统应用，人们经常考虑对芯片上的光学和电子组件使用单一材料系统，因为它不会因晶格失配而变得复杂。与晶格失配材料系统（例如，Si上的GaAs）的外延生长相比，薄膜转移技术不会导致大量错配位错，而错位错位会对器件性能产生不利影响。我们获得的结果证明了薄膜转移工艺的可行性，并指出了将OEIC和由多种材料制成的其他组件潜在地集成在同一主体衬底上的潜在可能性。3

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