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Sulfuric acid treatment of indium tin oxide for application of organic light-emitting diodes

机译：硫酸处理铟锡氧化物在有机发光二极管中的应用

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摘要

In this paper, indium tin oxide (ITO) substrates were treated by ethanol, sulfuric acid (98%) and oxygen plasma respectively, based on which organic light-emitting diodes (OLEDs) with the same double-layer structure: ITO/N,N'-bis-(1-naphyl)-N,N'-diphenyl-1,1'- biphenyl-4,4'-diamine(NPB)/tris-(8-hydroxyquinoline) aluminum(Alq_3)/ Mg:Ag/Al were fabricated. The morphology and compositions of differently treated ITO films were analyzed by atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). AFM results showed that all these treatments didn't change much the average roughness of ITO films, while ethanol has little influence on the large "peak-valley" (P-V) distance of ITO film; ITO film treated by sulfuric acid has suitable surface morphology with low P-V distance, low average roughness and small particle radius. XPS analysis proved that ethanol has the weakest ability to remove carbon contamination on the surface of ITO film which resulted in unevenly distributed current and high barriers for hole injection; sulfuric-acid-treated ITO film has the least contamination of carbon and higher concentration of oxygen vacancies, both of which are helpful for the improvement of devices. In the condition of room temperature and atmosphere and without encapsulation, measurements of the current-voltage, brightness-voltage and lifetime characteristics of these devices were conducted and showed good agreement with what expected from the results of AFM and XPS analysis: the ethanol-treated ITO provides very unstable performance with low efficiency for the device based on it, while the device based on sulfuric-acid-treated ITO anode had even better performance at higher driven voltage ( > 7V) comparing with the device based on oxygen-plasma-treated ITO substrate and had the highest current-luminance efficiency (3.2 cd/A) and the longest lifetime (2 hours).
机译：在本文中，分别用乙醇，硫酸（98％）和氧等离子体处理氧化铟锡（ITO）基板，在此基础上，具有相同双层结构的有机发光二极管（OLED）：ITO / N， N'-双-（1-萘）-N，N'-二苯基-1,1'-联苯-4,4'-二胺（NPB）/三（8-羟基喹啉）铝（Alq_3）/ Mg：Ag / Al被制造。通过原子力显微镜（AFM）和X射线光电子能谱（XPS）分析了经过不同处理的ITO膜的形貌和组成。原子力显微镜的结果表明，所有这些处理都不会改变ITO膜的平均粗糙度，而乙醇对ITO膜的大“峰谷”（P-V）距离几乎没有影响。经硫酸处理的ITO膜具有合适的表面形貌，P-V距离小，平均粗糙度低，颗粒半径小。 XPS分析证明，乙醇去除ITO膜表面的碳污染的能力最弱，这导致电流分布不均和空穴注入的高阻挡层。经硫酸处理的ITO膜具有最小的碳污染和更高的氧空位浓度，这两者都有助于改善器件。在室温和大气条件下且没有封装的情况下，对这些器件的电流-电压，亮度-电压和寿命特性进行了测量，结果与AFM和XPS分析的结果相符：乙醇处理过ITO为基于它的设备提供了非常不稳定的性能，并且效率很低，而与基于氧等离子体处理的设备相比，基于硫酸处理的ITO阳极的设备在更高的驱动电压（> 7V）下具有更好的性能。 ITO基板具有最高的电流亮度效率（3.2 cd / A）和最长的寿命（2小时）。

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