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首页> 外文学位 >Design, synthesis, thin film deposition and characterization of new indium tin oxide anode functionalization/hole transport organic materials and their application to high performance organic light-emitting diodes.
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Design, synthesis, thin film deposition and characterization of new indium tin oxide anode functionalization/hole transport organic materials and their application to high performance organic light-emitting diodes.

机译：新型铟锡氧化物阳极功能化/空穴传输有机材料的设计，合成，薄膜沉积和表征及其在高性能有机发光二极管中的应用。

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摘要

The primary goals of this dissertation were to understand the physical and chemical aspects of organic light-emitting diode (OLED) fundamentals, develop new materials as well as device structures, and enhance OLED electroluminescent (EL) response. Accordingly, this dissertation analyzes the relative effects of indium tin oxide (ITO) anode-hole transporting layer (HTL) contact vs. the intrinsic HTL material properties on OLED EL response. Two siloxane-based HTL materials, 4,4'-bis[(4″ -trichlorosilylpropyl-1″-naphthylphenylamino)biphenyl (NPB-Si2) and 4,4'-bis[(p-trichlorosilylpropylphenyl)phenylamino]biphenyl (TPD-Si2) have thereby been designed, synthesized and covalently bound to ITO surface. They afford a 250% increase in luminance and ∼50% reduction in turn-on voltage vs. comparable 4,4'-bis(1-naphthylphenylamino)biphenyl (NPB) HTL-based devices. These results suggest new strategies for developing OLED HTL structures, with focus on the anode-HTL contact.; Furthermore, archetypical OLED device structures have been refined by simultaneously incorporating the TPD-Si2 layer and a hole- and exciton-blocking/electron transport layer (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) in tris(8-hydroxyquinolato)aluminum(III) and tetrakis(2-methyl-8-hydroxyquinolinato)borate-based OLEDs. The refined device structures lead to high performance OLEDs such as green-emitting OLEDs with maximum luminance (Lmax) ∼ 85,000 cd/m2, power and forward external quantum efficiencies (eta p and etaext) as high as 15.2 lm/W and 4.4 +/- 0.5%, respectively, and blue-emitting OLEDs with Lmax 30,000 cd/m 2, and ∼5.0 lm/W and 1.6 +/- 0.2% etap and eta ext, respectively. The high performance is attributed to synergistically enhanced hole/electron injection and recombination efficiency.; In addition, molecule-scale structure effects at ITO anode-HTL interfaces have been systematically probed via a self-assembly approach. A series of silyltriarylamine precursors differing in aryl group and linker density have been designed and synthesized for this purpose. These precursors form conformal and largely pin-hole free self-assembled monolayers (SAMs) on the anode surface with A-level thickness control. Followed by deposition of a HTL on top of the SAMs, the probe molecules are placed precisely at the anode-HTL interface, resulting in varied hole injection magnitude and OLED response. The large interfacial molecular structure effects afford an approach to tuning OLED hole injection flux over one to two orders of magnitude, resulting in up to 3 fold variation in OLED brightness at identical bias and up to a 2 V driving voltage modulation at identical brightness.
机译：本文的主要目的是了解有机发光二极管（OLED）基础的物理和化学方面，开发新材料以及器件结构，并增强OLED电致发光（EL）响应。因此，本文分析了氧化铟锡（ITO）阳极-空穴传输层（HTL）接触的相对效应与固有HTL材料性能对OLED EL响应的关系。两种基于硅氧烷的HTL材料，即4,4'-双[（（4''-三氯甲硅烷基丙基-1''-萘基苯基氨基）联苯（NPB-Si2）和4,4'-双[（对-三氯甲硅烷基丙基苯基）苯基氨基]联苯（TPD-因此，已经设计，合成并共价键合至ITO表面。与同类的基于4,4'-双（1-萘基苯基氨基）联苯（NPB）的HTL器件相比，它们的亮度提高了250％，导通电压降低了约50％。这些结果提出了开发OLED HTL结构的新策略，重点是阳极-HTL接触。此外，通过在tris中同时加入TPD-Si2层和空穴和激子阻挡/电子传输层（2,9-二甲基-4,7-二苯基-1,10-菲咯啉）来完善原型OLED器件的结构（8-羟基喹啉基）铝（III）和四（2-甲基-8-羟基喹啉基）硼酸酯基的OLED。精细的器件结构导致了高性能OLED，例如发绿色光的OLED，其最大亮度（Lmax）约为85,000 cd / m2，功率和正向外部量子效率（ηp和etaext）高达15.2 lm / W和4.4 + / -分别为0.5％和Lmax 30,000 cd / m 2和〜5.0 lm / W和1.6 +/- 0.2％etap和eta ext的发蓝光的OLED。高性能归因于空穴/电子注入和复合效率的协同增强。另外，已经通过自组装方法系统地探测了在ITO阳极-HTL界面上的分子尺度结构效应。为此目的，已经设计并合成了一系列芳基和连接基密度不同的甲硅烷基三芳基胺前体。这些前体通过A级厚度控制在阳极表面形成共形且基本上无针孔的自组装单分子层（SAMs）。在SAM顶部沉积HTL之后，将探针分子精确地放置在阳极-HTL界面处，从而导致不同的空穴注入幅度和OLED响应。较大的界面分子结构效应提供了一种方法，可将OLED空穴注入通量调节到一到两个数量级，从而在相同的偏压下导致OLED亮度变化最多3倍，在相同的亮度下产生2V驱动电压调制。

著录项

  • 作者

    Huang, Qinglan.;

  • 作者单位

    Northwestern University.;

  • 授予单位 Northwestern University.;
  • 学科 Chemistry General.; Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2005
  • 页码 199 p.
  • 总页数 199
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;工程材料学;
  • 关键词

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