Detectors of UV and X-ray irradiation on the base of metal-zinc selenide contact

机译：基于金属-硒化锌接触的紫外线和X射线检测器

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The paper presents results of experimental investigations of electric and photoelectric properties of the diodes, obtained by thermal sputtering of semi transparent Ni layers over monocrystalline wafers of zinc selenide. It was found that parameters of diode structures studied are very similar to those of "ideal" metal-semiconductor contact. Influence of temperature, UV- and X-ray radiation on diode parameters is discussed.

机译：本文介绍了通过对硒化锌单晶晶片上的半透明Ni层进行热溅射而获得的二极管的电学和光电性能的实验研究结果。发现所研究的二极管结构的参数与“理想的”金属-半导体接触的参数非常相似。讨论了温度，紫外线和X射线辐射对二极管参数的影响。

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来源
《ICO20: Optical Devices and Instruments》|2005年|P.60242J.1-60242J.7|共7页
会议地点 Changchun(CN)
作者
Victor P. Makhniy; Volodymyr V. Melnyk; Peter N. Gorley; Paul P. Horley; Mykhailo M. Sletov; Zhuang Zhuo;
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作者单位

Yuri Fedkovych Chernivtsi National University,2 Kotsyubynsky Str., 58012 Chernivtsi, Ukraine;

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会议组织
原文格式 PDF
正文语种 eng
中图分类光学仪器;
关键词
zinc selenide; metal-semiconductor contact; dark and light current-voltage curves; UV- and X-rays; short circuit current; open circuit voltage;

机译：硒化锌;金属-半导体触点;暗-亮电流-电压曲线;紫外线和X射线;短路电流;开路电压;

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4. Detectors of UV and X-ray irradiation on the base of metal-zinc selenide contact [C] . . 2005

机译：基于金属-硒化锌接触的紫外线和X射线检测器
5. Sensitivity enhancement of poly(methyl methacrylate) by radiation-induced modification and degradation of PMMA by deep UV, x-ray,e-beam and proton beam irradiations. [D] . Choi, Jin-O. 1989

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6. Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts [O] . Gustavo A. Saenz, Goran Karapetrov, James Curtis, -1

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7. A novel LiF-based detector for X-ray imaging in Hydrogen loaded Ni films under laser Irradiation [O] . R. M. Montereali, S. Almaviva, T. Marolo, 2013

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Detectors of UV and X-ray irradiation on the base of metal-zinc selenide contact

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