Electrical characterization of electron irradiated X-rays detectors based on 4H-SiC epitaxial layers

A. Le Donne; S. Binetti; M. Acciarri

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Electrical characterization of electron irradiated X-rays detectors based on 4H-SiC epitaxial layers

机译：基于4H-SiC外延层的电子辐照X射线探测器的电学表征

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In this work, we report and discuss the results of minority carriers diffusion length measurements carried out in order to quantify the radiation damage induced by electron irradiation of X-rays detectors based on a metal-silicon carbide junction. The devices examined consisted of 4H-SiC n-type epitaxial layers on 4H-SiC n~+-type substrate wafers, on which Schottky contacts were formed by gold deposition. The minority carriers diffusion length, extracted from the results of photocurrent measurements using a fitting procedure, was shown to exhibit a strong decrease with the radiation dose.

机译：在这项工作中，我们报告并讨论了少数载流子扩散长度测量的结果，以量化由基于金属-碳化硅结的X射线探测器的电子辐照引起的辐射损伤。被检查的器件由4H-SiC n〜+型衬底晶片上的4H-SiC n型外延层组成，在其上通过金沉积形成肖特基接触。使用拟合程序从光电流测量结果中提取的少数载流子扩散长度显示出随辐射剂量的强烈降低。

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《Diamond and Related Materials》 |2004年第3期|共5页
作者
A. Le Donne; S. Binetti; M. Acciarri;
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正文语种 eng
中图分类电热工业、高温制品工业;
关键词
4H-SiC; Schottky diode; Radiation induced defects; Minority carriers diffusion length;

机译：4H-SiC;肖特基二极管;辐射诱导缺陷;少数载流子扩散长度;

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1. Electrical characterization of electron irradiated X-rays detectors based on 4H-SiC epitaxial layers [J] . A.Le Donne, S.Binetti, M.Acciarri, Diamond and Related Materials . 2004,第3期

机译：基于4H-SiC外延层的电子辐照X射线探测器的电学表征
2. Electrical and optical characterization of electron-irradiated 4H-SiC epitaxial layers annealed at low temperature [J] . A. Le Donne, S. Binetti, S. Pizzini Diamond and Related Materials . 2005,第3a7期

机译：低温退火的电子辐照4H-SiC外延层的电学和光学特性
3. Effect of Irradiation with Fast Neutrons on Electrical Characteristics of Devices Based on CVD 4H-SiC Epitaxial Layers [J] . E. V. Kalinina, G. F. Kholuyanov, D. V. Davydov, Semiconductors . 2003,第10期

机译：快中子辐照对基于CVD 4H-SiC外延层的器件电学特性的影响
4. Electrical and optical characterization of electron irradiated X rays detectors based on 4H-SiC epitaxial layers [C] . A. Le Donne, S. Binetti, M. Acciarri, International Conference on Silicon Carbide and Related Materials 2003 pt.2(ICSCRM 2003); 20031005-20031010; Lyon; FR . 2003

机译：基于4H-SiC外延层的电子辐照X射线探测器的电学和光学特性
5. High Resolution Radiation Detectors Based on 4H-SiC N-Type Epitaxial Layers and Pixilated CdZnTe Single Crystal Devices [D] . Oner, Cihan. 2018

机译：基于4H-SiC N型外延层和像素Cdznte单晶装置的高分辨率辐射检测器
6. Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer [O] . Yongwei Li, Ting Liang, Cheng Lei, 2019

机译：基于P型4H-SiC外延层的压阻特性定量分析。
7. Highly sensitive x-ray detectors in the low-energy range on n-type 4H-SiC epitaxial layers [O] . Krishna C. Mandal, Peter G. Muzykov, J. Russell Terry 2012

机译：高能量X射线探测器在N型4H-SIC外延层上的低能量范围内

Electrical characterization of electron irradiated X-rays detectors based on 4H-SiC epitaxial layers

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