High- frequency Characteristics of Drain Current Noise of 40nm n-MOSFETs in Weak Inversion Region

机译：弱反型区40nm n-MOSFET漏极电流噪声的高频特性

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

Bias non-conservation characteristics of high-frequency noise of 40nm n-MOSFETs are identified by measuring its drain current noise. Measurement results over a wide temperature range demonstrate the existence of thermal noise of 40nm n-MOSFETs in the weak and low middle inversion region, contrary to the predictions of suppressed shot noise model only suitable in the strong inversion and high middle inversion region. These new findings on the noise mechanisms of 40nm n-MOSFETs are very beneficial for its ultra low-voltage low-power RF application, such as noise analysis, circuit design and process technology evaluation.

机译：通过测量其漏极电流噪声，可以确定40nm n-MOSFET的高频噪声的偏不保守特性。在较宽的温度范围内的测量结果表明，在弱中低反转区域中存在40nm n-MOSFET的热噪声，这与仅适用于强反转和高中反转区域的抑制散粒噪声模型的预测相反。这些有关40nm n-MOSFET噪声机制的新发现对于其超低压低功率RF应用非常有益，例如噪声分析，电路设计和工艺技术评估。

著录项

来源
《IEEE Advanced Information Technology, Electronic and Automation Control Conference》|2018年|918-921|共4页
会议地点 Chongqing(CN)
作者
Bo Li; Jun Wang;
展开▼
作者单位

School of Information Engineering Southwest University of Science and Technology Mianyang 621010 China;

展开▼
会议组织
原文格式 PDF
正文语种
中图分类
关键词
MOSFET circuits; Semiconductor device modeling; MOSFET; Noise measurement; Thermal noise; Substrates; Radio frequency;

机译：MOSFET电路；半导体器件建模； MOSFET;噪声测量；热噪声；基材；无线电频率;

相似文献

外文文献
中文文献
专利

1. Impact of high-κ and SiO_2 interfacial layer thickness on low- frequency (1/f) noise in aggressively scaled metal gate/HfO_2 n-MOSFETs: role of high-κ phonons [J] . P. Srinivasan, B. P. Linder, V. Narayanan, Microelectronic Engineering . 2007,第9a10期

机译：高κ和SiO_2界面层厚度对激进规模的金属栅极/ HfO_2 n-MOSFET中低频（1 / f）噪声的影响：高κ声子的作用
2. Comparison of Low-Frequency Noise in Channel and Gate-Induced Drain Leakage Currents of High-$k$ nFETs [J] . Lee J.-W., Lee B. H., Shin H., Electron Device Letters, IEEE . 2010,第10期

机译：高k $ nFET的沟道和栅极感应的漏漏电流中的低频噪声比较
3. Temperature-Dependent Drain Current Characteristics and Low Frequency Noises in Indium Zinc Oxide Thin Film Transistors [J] . LIU Yuan, WU Wei-Jing, QIANG Lei, 中国物理快报：英文版 . 2015,第008期

机译：氧化铟锌薄膜晶体管中随温度变化的漏极电流特性和低频噪声
4. High- frequency Characteristics of Drain Current Noise of 40nm n-MOSFETs in Weak Inversion Region [C] . Bo Li, Jun Wang Advanced Information Technology, Electronic and Automation Control Conference . 2018

机译：弱反转区域中40nm N-MOSFET的漏极电流噪声的高频特性
5. Current- Voltage Characteristics and Low Frequency Noise Spectroscopy of GaAsSb Nanowires [D] . Dev, Durjoy. 2017

机译：高纳米纳米线的电流 - 电压特性和低频噪声光谱
6. Opposite effects of high- and low-frequency transcranial random noise stimulation probed with visual motion adaptation [O] . Gianluca Campana, Rebecca Camilleri, Beatrice Moret, -1

机译：视觉运动适应探测高频和低频经颅随机噪声刺激的相反作用
7. Analysis of drain current transient stability of AlGaN/GaN HEMT stressed under HTOL HTRB, by random telegraph noise and low frequency noise characterizations [O] . J.G. Tartarin, O. Lazar, A. Rumeau, 2020

机译：随机电报噪声和低频噪声特性，AlGaN / GaN HEMT的漏极电流瞬态稳定性的漏极电流瞬态稳定性分析
8. Frequency Dependence of Q in the Crust and Upper Mantle of China and Surrounding Regions, from Computations of Lg Q and the Attenuation of High- Frequency P-Waves [R] . Mitchell, B. J. , Jemberie, A. L. , Leyton, F. , 2006

机译：从Lg Q的计算和高频p波的衰减看中国地壳和上地幔中Q的频率依赖性

High- frequency Characteristics of Drain Current Noise of 40nm n-MOSFETs in Weak Inversion Region

摘要

著录项

相似文献

相关主题

期刊订阅