Porous Silicon-based cDNA Array Sensors

机译：多孔硅基cDNA阵列传感器

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A novel cDNA array sensor with porous silicon / oxidized porous silicon (PS/OPS) as its substrate has been developed. The binding capacity, linear dynamic range, and detection limit of the sensor were improved due to enormous specific surface area of PS/OPS compared to the existing conventional techniques. The cDNA array sensor shows good stability as the sensor can bear 80 centre degree of temperature, 75% of relative humidity and 3.6 kLx of irradiation (Signals changes are close to SD), respectively.

机译：开发了一种以多孔硅/氧化多孔硅（PS / OPS）为底物的新型cDNA阵列传感器。与现有的传统技术相比，由于PS / OPS的巨大比表面积，传感器的结合能力，线性动态范围和检测极限得到了改善。 cDNA阵列传感器显示出良好的稳定性，因为该传感器可以承受80个中心温度，75％的相对湿度和3.6 kLx的辐射（信号变化接近SD）。

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来源
《IEEE International Conference on Mechatronics and Automation; 20060625-28; Luouang(CN)》|2006年|P.567-571|共5页
会议地点 Luouang(CN)
作者
Ziqiang Zhu; Jian Zhang; Bin Zhu; Jianzhong Zhu; Rong Wang; Xiaqin Wu;
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作者单位

Department of Electronic Engineering East China Normal University 3663 North Zhongshan Road, Shanghai 200062, China;

Department of Chemistry Shanghai Normal University Shanghai 200233, China;

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会议组织
原文格式 PDF
正文语种 eng
中图分类 TH15;
关键词
porous silicon; cDNA array sensor; binding capacity; dynamic range; detection limit;

机译：多孔硅； cDNA阵列传感器；结合能力；动态范围；检测限;

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4. Porous Silicon based cDNA Array Sensor [C] . . 2006

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Porous Silicon-based cDNA Array Sensors

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