BJMOSFET Based on SOI

机译：基于SOI的BJMOSFET

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A new-style compound device of BJT and MOS-Bipolar Junction MOSFET based on SOI ( SOI BJMOSFET) has been proposed. The structure of SOI BJMOSFET was introduced and the work principle was analyzed reasonedly. Its different characteristics were also discussed detailedly. From the detailed analysis and research, it is concluded that SOI BJMOSFET is assuredly a much more excellent new-style solid electronic device.

机译：提出了一种新型的基于SOI的BJT和MOS双极结型MOSFET复合器件（SOI BJMOSFET）。介绍了SOI BJMOSFET的结构，并对工作原理进行了合理的分析。还详细讨论了它的不同特性。通过详细的分析和研究，可以得出结论，SOI BJMOSFET无疑是一种更加出色的新型固体电子器件。

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来源
《IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications vol.2; 20050808-12; Beijing(CN)》|2005年|P.887-890|共4页
会议地点 Beijing(CN)
作者
ZENG Yun; ZHANG Yan; LI Xiaolei; ZHANG Lin; ZHOU Shaohua;
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作者单位

Microelectronic institute, Hunan University, ChangSha in China, 410082;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线通信;
关键词
BJMOSFET; SOI; solid electronic device;

机译：BJMOSFET; SOI;固体电子器件;

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1. RESEARCH OF BJMOSFET FREQUENCY CHARACTERISTICS [J] . Zeng Yun, Yang Hongguan, Shang Yuquan, Journal of Electronics (CHINA) . 2006,第4期

机译：BJMOSFET频率特性的研究
2. RESEARCH OF BJMOSFET FREQUENCY CHARACTERISTICS [J] . Zeng Yun, Yang Hongguan, Shang Yuquan, 电子科学学刊（英文版） . 2006,第004期

机译：BJMOSFET频率特性的研究
3. Temperature Characteristics of BJMOSFET [J] . ZENG Yun, YAN Min, YANG Hong-guan, Semiconductor photonics and technology . 2005,第2期

机译：BJMOSFET的温度特性
4. Photo-BJMOSFET Based on SOI Film and Its Analytical Compact Model [C] . Symposium on Photonics and Optoelectronics . 2009

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BJMOSFET Based on SOI

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