Photo-BJMOSFET Based on SOI Film and Its Analytical Compact Model

机译：基于SOI电影的照片BJMOSFET及其分析紧凑型模型

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A novel photoelectric device-photo-BJMOSFET (Bipolar Junction Metal-Oxide-Semiconductor Field Effect Transistor) fabricated on SOI film was proposed in this paper. The photo-BJMOSFET operates in the depletion but not inversion region to decrease dark current. Due to two kinds of carriers (electron and hole) in this device, it is more sensitive than the conventional MOS structure under the same operating conditions and structure parameters. Numerical calculation of the analytical model indicates that photo-BJMOSFET has high sensitivity and SNR (Signal to Noise Ratio). In addition, it can eliminate the high dark current of PN junction under CMOS process, and promise compatibility with CMOS process.

机译：本文提出了一种新颖的光电器件 - 光电器件 - 光电装置（双极结金属氧化物 - 半导体场效应晶体效果晶体管）。光学BJMOSFET在耗尽中操作，但不是反转区域以降低暗电流。由于该装置中的两种载体（电子和孔），它比在相同的操作条件和结构参数下比传统的MOS结构更敏感。分析模型的数值计算表明光学BJMOSFET具有高灵敏度和SNR（信噪比）。此外，它还可以消除CMOS工艺下PN结的高暗谐波，并承诺与CMOS过程的兼容性。

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《Symposium on Photonics and Optoelectronics》|2009年||共4页
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中图分类 TN-53;
关键词
MOSFET; photoelectric devices; semiconductor device models; silicon-on-insulator; CMOS process; MOS structure; SOI film; analytical compact model; bipolar junction metal-oxide-semiconductor field effect transistor; dark current; depletion region; photoelectric device-photo-BJMOSFET; photosensitivity;

机译：MOSFET;光电器件;半导体器件型号;硅 - 绝缘体;CMOS工艺;MOS结构;SOI薄膜;分析紧凑型;双极结金属 - 氧化物 - 半导体场效应晶体管;暗电流;耗尽区;光电器件 - 照片BJMOSFET;光敏性;

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Photo-BJMOSFET Based on SOI Film and Its Analytical Compact Model

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