• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>IEEE Joint Conference: International Conference on IC Design and Technology amp; Solid State Systems Symposium >Scaling of split-gate flash memory and its adoption in modern embedded non-volatile applications
【24h】

Scaling of split-gate flash memory and its adoption in modern embedded non-volatile applications

机译：分割门闪存的扩展及其在现代嵌入式非易失性应用中的采用

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

This paper discusses the scaling of the third generation split-gate (SG) SuperFlash® memory technology (ESF3) from 90nm to 28nm nodes with the demonstration of performance and reliability of multi-megabit arrays embedded in various foundry baseline logic processes. Despite aggressive scaling of the cell size, the performance and reliability of the memory array are not compromised. This technology therefore continues to enable a wide range of modern embedded non-volatile applications such as smartcard devices that require very high endurance and low power, automotive microcontrollers that require zero data retention error with fast access time, and the Internet of Things (IoT) devices that require extremely low power consumption.
机译：本文讨论了将第三代分离门（SG）SuperFlash®存储技术（ESF3）从90nm扩展到28nm节点的过程，并演示了嵌入在各种铸造基准逻辑流程中的多兆位阵列的性能和可靠性。尽管对单元大小进行了积极的缩放，但是存储器阵列的性能和可靠性并未受到损害。因此，该技术继续支持广泛的现代嵌入式非易失性应用，例如要求非常高的耐用性和低功耗的智能卡设备，要求零数据保留错误且访问时间短的汽车微控制器以及物联网（IoT）需要极低功耗的设备。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号