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首页> 外文会议>IEEE Photovoltaic Specialist Conference >Effect of luminescence coupling between InGaP and GaAs subcells to external quantum efficiency in triple-junction solar cells
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Effect of luminescence coupling between InGaP and GaAs subcells to external quantum efficiency in triple-junction solar cells

机译：三结太阳能电池中InGaP和GaAs子电池之间的发光耦合对外部量子效率的影响

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摘要

Luminescence coupling, which is reabsorption of recombination radiation in multi-junction solar cell, induces artifact response on external quantum efficiency (EQE). We have been investigated the relation between luminescence coupling and EQE in triple-junction solar cells (3J) for space applications. In this study, we focused the luminescence coupling induced by the emission from InGaP-top cells. LED light sources were introduced as bias light. The strength of the luminescence coupling between InGaP-top and GaAs-middle cells in newer-design 3J cells is higher than that of older-design 3J cells. The strength of “series coupling”, which is induced in Ge-bottom cells by the coupling between InGaP-top and GaAs-middle cells, is about an order of magnitude lower than the strength of coupling between InGaP-top and GaAs-middle cells. In 3J cells that have the high intensity of emission from InGaP-top cell, the EQE of Ge-bottom cells only with the activation of InGaP-top cells does not need artifact correction.
机译：发光耦合是多结太阳能电池中重组辐射的重吸收，它引起外部量子效率（EQE）的伪影响应。我们已经研究了空间应用的三结太阳能电池（3J）中的发光耦合与EQE之间的关系。在这项研究中，我们重点研究了InGaP-top细胞发射引起的发光耦合。 LED光源被引入作为偏光。在新设计的3J电池中，InGaP顶部电池和GaAs中间电池之间的发光耦合强度高于旧设计的3J电池。由InGaP-top和GaAs-中间电池之间的耦合在Ge底部电池中诱导的“串联耦合”的强度比InGaP-top和GaAs中间电池之间的耦合强度低大约一个数量级。 。在InGaP-top细胞具有高发射强度的3J细胞中，仅激活InGaP-top细胞的Ge底部细胞的EQE不需要人工校正。

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