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首页> 外文会议>IMAPS 2008 - 41st international symposium on microelectronics: bringing together the entire microelectronics supply chain >Thermal Verification of a High-Temperature Power Package Utilizing SiliconCarbide Devices
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Thermal Verification of a High-Temperature Power Package Utilizing SiliconCarbide Devices

机译：利用碳化硅器件对高温功率封装进行热验证

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The researchers at Arkansas Power Electronics International, Inc. and ROHM CO., LTD. have simulated and testedrnhigh-temperature packaging technologies for SiC devices in an effort to develop more accurate modelingrnparameters for future applications. The laboratory test consists of parallel SiC power DMOSFETs, manufacturedrnby Rohm, and SiC power VJFETs operating under self-regulating current sharing conditions.rnTo produce accurate thermal simulations, thermal models require numerous design parameters that are constrainedrnto strict tolerances. Moreover, this presents an interesting challenge at junction temperatures (T_j) over 175 ℃ asrnmost individual components have not been previously tested or verified at these temperatures. To extract thesernparameters at high-temperatures, the researchers have modeled a complete thermal system (including bare die,rnsubstrate, package, heatsink, and all thermal interfaces between said components) then built and tested an identicalrnsystem to characterize the system's parameters over temperature. Specifically, the advantages between differentrntypes of thermal interfaces, including die attaches, substrate attaches, and thermal greases, were characterized overrntemperature. A high resolution thermal imaging camera was used to capture surface temperatures of the system torncompare with simulation results. Due to mismatches in emissivity between components, multiple high-temperaturernconformal coatings were tested and characterized over temperature, as well. In this paper, the researchers willrnpresent the results of the laboratory testing that included the characterization of SiC DMOSFETs and SiC VJFETsrnoperating up to 300 ℃, as well as the thermal simulation results.
机译：阿肯色州电力电子国际公司和ROHM CO。，LTD。的研究人员。已经对SiC器件的高温封装技术进行了仿真和测试，以期为将来的应用开发更精确的建模参数。实验室测试由Rohm制造的并联SiC功率DMOSFET和在自调节均流条件下工作的SiC功率VJFET组成。要产生精确的热仿真，热模型需要大量设计参数，这些参数必须严格限制。此外，这对于超过175℃的结温（T_j）提出了一个有趣的挑战，因为以前尚未在这些温度下测试或验证过大多数单个组件。为了提取高温下的热学参数，研究人员对完整的热系统（包括裸芯片，基板，封装，散热器以及上述组件之间的所有热界面）进行了建模，然后构建并测试了一个相同的系统，以表征整个温度范围内系统的参数。具体地说，包括模具连接，基板连接和导热油脂在内的不同类型的热界面之间的优点是过热。高分辨率热成像相机用于捕获与仿真结果相比被撕裂的系统表面温度。由于组件之间的发射率不匹配，因此还测试了多个高温保形涂层并在整个温度范围内进行了表征。在本文中，研究人员将展示实验室测试的结果，其中包括在高达300℃的温度下对SiC DMOSFET和SiC VJFET的表征以及热仿真结果。

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