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首页> 外文会议>IMAPS Advanced Technology Workshop on Thermal Management for High Performance Computing and Telecom/Wireless Applications Apr 20-21, 2001, Palo Alto, California >Chemical Vapor Deposited SiC for Thermal Management Applications
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Chemical Vapor Deposited SiC for Thermal Management Applications

机译：用于热管理应用的化学气相沉积SiC

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摘要

SiC is a good material for high heat load applications due to its many attractive properties such as high value of thermal conductivity and flexural strength, low value of thermal expansion coefficient and excellent resistance to thermal shock, oxidation and chemicals. However, the properties of SiC, particularly the thermal conductivity depend considerably upon the specific method used to produce it. Four forms of SiC are commercially available ― CVD-SiC, single crystal, reaction bonded which includes a second phase of Si (10-40%) and hot pressed. Their thermal conductivity values are respectively 300-374, 300-380, 120-170 and 50-120 W/mK. We see that thermal conductivity is the highest for single crystal and CVD-SiC. However, the single crystal material is only available as wafers of at most a few inches in diameter. The next best candidate is CVD-SiC, which is a fine grain polycrystalline material. This material has significantly better thermal conductivity and polishability in comparison to hot pressed and reaction bonded SiC.
机译：SiC具有许多吸引人的特性，例如高导热率和抗弯强度，低热膨胀系数值以及出色的抗热震性，抗氧化性和抗化学性，因此是用于高热负荷应用的良好材料。但是，SiC的性能，特别是导热系数，在很大程度上取决于用于生产它的特定方法。四种形式的SiC是可商购的-CVD-SiC，单晶，反应结合，其中包括第二相Si（10-40％）并热压。它们的热导率值分别为300-374、300-380、120-170和50-120 W / mK。我们看到单晶和CVD-SiC的导热率最高。但是，单晶材料只能用作直径最大为几英寸的晶片。次佳的候选材料是CVD-SiC，它是一种细晶粒的多晶材料。与热压和反应结合的SiC相比，该材料具有明显更好的导热性和抛光性。

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