IR imaging Comparison with FEA for 4mm GaAs IC

机译：4mm GaAs IC与FEA的红外成像比较

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Gallium Arsenide (GaAs) IC components used in Broadband RF amplifrers can provide excellent gain and minimal distortion. However, careful thermal design is important to meet performance and reliability targets for data and telephony applications. This presentation will describe finite element simulations and thermal infrared imaging techniques, and will show how correlations can be made between the two. An example 4mm MESFET under hypothetical loading is ysed for purposes of illustration. Heat Sows by conduction from the gate region downward through the die and eutectic attachment into an underlying spreader, substrate and heat sink. The FEA model simulates detailed temperatures that are compared to state of the art infrared micro-thermography images. The model is adjusted for detector spot size and partial transparency of the semiconductor to infrared waveiengths. The resulting simulation is in close agreement to test data.

机译：宽带射频放大器中使用的砷化镓（GaAs）IC组件可提供出色的增益和最小的失真。但是，仔细的散热设计对于满足数据和电话应用的性能和可靠性目标很重要。本演讲将描述有限元模拟和热红外成像技术，并将展示如何在两者之间建立关联。为了说明的目的，以假设负载下的示例4mm MESFET为例。通过从管芯区域向下穿过芯片和共晶附接的热母猪进入下面的扩散器，衬底和散热器。 FEA模型可以模拟详细的温度，并将其与最新的红外微热成像图像进行比较。调整了模型的检测器光斑大小和半导体对红外波长的部分透明性。最终的模拟与测试数据非常吻合。

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《IMAPS Advanced Technology Workshop on Thermal Management for High Performance Computing and Telecom/Wireless Applications Apr 20-21, 2001, Palo Alto, California》|2001年|p.18.1-18.6|共6页
会议地点 Palo Alto CA(US)
作者
John Nagurny;
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作者单位

Motorola Inc. Broadband Communications Sector Horsham, PA;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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IR imaging Comparison with FEA for 4mm GaAs IC

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