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首页> 外文会议>Infrared spaceborne remote sensing and instrumentation XVI >Advanced InGaAs/InAlAs/InP avalanche photodiodes for high speed detection of 1.55 μm infrared radiation
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Advanced InGaAs/InAlAs/InP avalanche photodiodes for high speed detection of 1.55 μm infrared radiation

机译：先进的InGaAs / InAlAs / InP雪崩光电二极管可高速检测1.55μm红外辐射

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摘要

High-speed, high-sensitivity, avalanche photodiodes operating at 1.55 μm spectral range have been utilized in modern long-haul and high-bit rate optical communication systems. Related research was focused on developing detectors with minimized excess noise and maximized gain-bandwidth product.rnRecently imaging and critical sensing applications stimulated development of modified avalanche photodiode structures operating in 1.55 μm spectral range. For these devices speed is no more critical. Instead, very low current densities and low multiplication noise are the main requirement.rnIn the present work the performance of uncooled InGaAs/InAlAs/InP avalanche photodiodes operating near 1.5 μm has been studied. Device modeling based on advanced drift and diffusion model have been performed with commercial Crosslight APSYS simulator. Conventional separate absorption, charge and multiplication (SACM) avalanche photodiode as well as devices with a relatively thick undepleted p-type InGaAs absorption region and thin InAlAs multiplication layer have been considered. The latter type of APD structure enables to increase device quantum efficiency, reduce dark current and eliminate impact ionization processes within absorbing layer.
机译：在现代长距离和高比特率光通信系统中已经使用了在1.55μm光谱范围内运行的高速，高灵敏度雪崩光电二极管。相关研究的重点是开发具有最小过量噪声和最大化增益带宽积的探测器。最近的成像和临界传感应用促进了在1.55μm光谱范围内工作的改进型雪崩光电二极管结构的发展。对于这些设备，速度不再是至关重要的。相反，非常低的电流密度和低的乘法噪声是主要要求。在当前工作中，已经研究了工作在1.5μm附近的未冷却InGaAs / InAlAs / InP雪崩光电二极管的性能。已经使用商用Crosslight APSYS模拟器对基于高级漂移和扩散模型的设备进行了建模。已经考虑了常规的分离吸收，电荷和倍增（SACM）雪崩光电二极管以及具有相对较厚的未耗尽p型InGaAs吸收区和较薄的InAlAs倍增层的器件。后一种类型的APD结构能够提高器件量子效率，减少暗电流并消除吸收层内的碰撞电离过程。

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