• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Infrared spaceborne remote sensing and instrumentation XVI >Uncooled Semiconductor Detectors for IR to UV Remote Sensing
【24h】

Uncooled Semiconductor Detectors for IR to UV Remote Sensing

机译：未冷却的半导体探测器，用于红外至紫外遥感

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Results are presented on three different approaches which show room temperature infrared sensing. The first approach is based on transitions from the light/heavy hole to the split-off band in p-doped GaAs/AlGaAs heterostructure showing a response threshold of 3.4 urn and operating up to a temperature of 330 K. The peak responsivity at 2.5 μm was ～1.5 mA/W with a D~* of 2.3×10~6 Jones at 330 K. The split-off threshold can be extended to longer wavelengths by using different materials. The second approach is based on capacitance variations in a quantum dot (QD) embedded dielectric medium. The incident IR photons induce charge separation inside the QDs and effectively change the dielectric properties varying the capacitance. Initial devices using PbS and ZnO QDs in paraffin have shown detection at 310 K in both the visible-NIR range. Using other materials and sizes of dots the range can be tailored for applications in other ranges including the UV range. The third approach uses tunneling quantum dot infrared photodetector (TQDIP) structures providing multi-color characteristics, and bias dependent wavelength selectivity. Here a tunneling barrier is used to block the dark current while permitting the photocurrent to pass through due to resonance effects. A preliminary TQDIP detector showed room temperature response at 6 and 17 μm with responsivity of 75 mA/W and 150 mA/W, respectively. The peak detectivity of ～10~7 Jones was reported for both peaks.
机译：结果显示了三种不同的方法，它们显示了室温红外感应。第一种方法基于p型掺杂的GaAs / AlGaAs异质结构中从轻/重空穴到分离带的跃迁，其响应阈值为3.4 urn，最高工作温度为330K。峰值响应率为2.5μm在330 K时的D〜*为2.3×10〜6 Jones时约为1.5 mA / W。使用不同的材料可以将分离阈值扩展到更长的波长。第二种方法基于量子点（QD）嵌入式电介质中的电容变化。入射的红外光子在量子点内部引起电荷分离，并通过改变电容有效地改变介电特性。在石蜡中使用PbS和ZnO QD的初始设备显示出在可见NIR范围内均以310 K进行检测。使用其他材料和点的大小，可以针对包括紫外线范围在内的其他范围的应用量身定制范围。第三种方法使用隧穿量子点红外光电探测器（TQDIP）结构，该结构提供多色特性以及与偏置有关的波长选择性。此处，隧道势垒用于阻止暗电流，同时由于共振效应而允许光电流通过。初步的TQDIP检测器显示室温响应为6和17μm，响应度分别为75 mA / W和150 mA / W。据报道，两个峰的检出率均为〜10〜7 Jones。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号