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Hydrostatic pressure dependence of intersubband transitions of HgTe/Hg_(1-x)Cd_x Te superlattices and FIR detector applications

机译:HgTe / Hg_(1-x)Cd_x Te超晶格的子带间跃迁的静水压力依赖性和FIR检测器应用

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摘要

Detectors in the far infrared based on HgTe/Hg_(1-x)Cd_x Te superlattices (SL's) are superior to those based on Hg_(1-x)Cd_x Te alloys. This is based on their band structure, however, it was concluded in an investigation of the hydrostatic pressure dependence of photoluninescence (PL) peaks investigation reported in Phys. Rev. B 48, 4460 (1993) that either the band structure model was incorrect or the observed PL peaks were related to impurities. In contrast, in optical absorption experiments, the hydrostatic pressure dependence of intersubband transitions agrees with theory, which corraborates the validity of the band structure model.rnThe first advantage is the required precision of the growth parameters for the desired band gap or cut off wavelength (λ_(co)). More important is the possibility to significantly reduce leak currents by the appropriate choice of barrier thickness. Furthermore the absorption edge is much steeper and therefore the SL can be much thinner. Due to Auger suppression in these type III SL's, carrier lifetimes are significantly enhanced. Finally the SL is significantly less susceptible to a Burstein-Moss shift of the adsorption edge; at least an order of magnitude greater electron concentration is necessary in order to produce the same Burstein-Moss shift. A method for in situ p type doped quantum wells (QW's) and SL's with nitrogen and arsenic by means of molecular beam epitaxy (MBE) is discussed.
机译:基于HgTe / Hg_(1-x)Cd_x Te超晶格(SL)的远红外探测器优于基于Hg_(1-x)Cd_x Te合金的探测器。这是基于它们的能带结构,但是,这是在Phys.Inc。中对光致发光(PL)峰的静水压依赖性的研究中得出的结论。 Rev. B 48,4460(1993)指出,带结构模型不正确或观察到的PL峰与杂质有关。相比之下,在光吸收实验中,子带间跃迁的静水压力依赖性与理论相符,从而证实了能带结构模型的有效性.rn第一个优点是所需带隙或截止波长( λ_(co))。更重要的是通过适当选择势垒厚度可以显着降低泄漏电流。此外,吸收边缘更陡峭,因此SL可以更薄。由于这些III型SL的俄歇抑制,载流子寿命大大提高。最终,SL明显不易受到吸附边的Burstein-Moss位移的影响。为了产生相同的布尔斯坦-莫斯频移,至少需要至少一个数量级的更大的电子浓度。讨论了一种利用分子束外延(MBE)技术对氮和砷进行原位p型掺杂量子阱(QW)和SL的方法。

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  • 会议地点 San Diego CA(US)
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    Microphysics Labotory, University of Illinois at Chicago,845 W. Taylor St., MC 273, Chicago, IL 60607, U.S.A. Physikalisches Institut der Universitaet Wuerzburg, Am Hubland, 97074 Wuerzburg, Germany;

    Physikalisches Institut der Universitaet Wuerzburg, Am Hubland, 97074 Wuerzburg, Germany;

    Physikalisches Institut der Universitaet Wuerzburg, Am Hubland, 97074 Wuerzburg, Germany;

    Microphysics Labotory, University of Illinois at Chicago,845 W. Taylor St., MC 273, Chicago, IL 60607, U.S.A.;

    EPIR Technologies Inc., 590 Territorial Drive, Suite B, Bolingbrook, IL 6O44O, U.S.A.;

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  • 正文语种 eng
  • 中图分类 V443.5;
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