The Preparation and Characterization of Copper Silicon Alloy Films

机译：铜硅合金膜的制备与表征

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

The fabrication, physical and electrochemical properties of copper silicon alloy film were systematically studied and the optimized preparation conditions were obtained. When KrF excimer laser (λ=248 nm) repetition rate is l0Hz, laser energy is 260mJ, vacuum is 10~(-5)Pa, target and substrate revolution per minute of target is 10, substrate temperature is 300℃ and deposition time is l.0h, as-deposited film from Si target and Cu substrate is obtained by pulsed laser deposition. XRD pattern showed that as-deposited film is cubic structure of Cu_9Si, SEM images showed that as-deposited film has regular surface, particle size is about 300nm and particle size distribution is in narrow range. And the same time the electrochemical properties of as-deposited film showed good cycleability.

机译：对铜硅合金薄膜的制备，物理和电化学性能进行了系统研究，并获得了优化的制备条件。当KrF准分子激光（λ= 248 nm）重复频率为10Hz时，激光能量为260mJ，真空度为10〜（-5）Pa，靶材和靶材的每分钟转数为10，衬底温度为300℃，沉积时间为在1.0h，通过脉冲激光沉积获得了来自Si靶和Cu衬底的沉积膜。 XRD图谱表明，沉积后的薄膜为Cu_9Si的立方结构，SEM图像显示沉积后的薄膜具有规则的表面，粒径约为300nm，粒径分布在窄范围内。同时，沉积膜的电化学性能显示出良好的循环性能。

著录项

来源
《Inorganic thin films and coatings》|2012年|288-291|共4页
会议地点 Guilin(CN)
作者
Xiuli Feng; Bijin Li;
展开▼
作者单位

Institute of Electronic Engineering ,China Academy of Engineering Physics, Mianyang,Sichuan 621900, P.R. China;

Institute of Electronic Engineering ,China Academy of Engineering Physics, Mianyang,Sichuan 621900, P.R. China;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
Copper silicon alloy; Pulsed laser deposition; Thin-film batteries;

机译：铜硅合金；脉冲激光沉积薄膜电池;

相似文献

外文文献
中文文献
专利

1. Thermal Stability of Copper-Aluminum Alloy Thin Films for Barrierless Copper Metallization on Silicon Substrate [J] . Wang C. P., Dai T., Lu Y., Journal of Electronic Materials . 2017,第8期

机译：硅衬底屏障铜金属化铜铝合金薄膜的热稳定性
2. Preparation and Characterization of Electrochemically Deposited Silicon Films in Ionic Liquid from Polysilicon Byproduct SiCl₄ [J] . ZhanxiaZhao, JingjingLiu, ChenglongZhang International Journal of Electrochemical Science . 2018,第9期

机译：多晶硅副产物SiCl _{4 电化学沉积电化学沉积硅膜的制备与表征}
3. Growth and characterization of copper, indium and copper-indium alloy films non-aqueous method of electrodeposition [J] . Kumar SR, Prajapati B, Tiwari SK, Indian Journal of Pure & Applied Physics . 2008,第3期

机译：非水电沉积铜，铟和铜铟合金膜的生长与表征
4. The Preparation and Characterization of Copper Silicon Alloy Films [C] . Xiuli Feng, Bijin Li Workshop on Inorganic Thin Films and Coatings . 2013

机译：铜硅合金薄膜的制备与表征
5. Deposition and characterization of hydrogenated amorphous silicon, microcrystalline silicon and silicon-based alloy thin films. [D] . Wang, Cheng. 1991

机译：氢化非晶硅，微晶硅和硅基合金薄膜的沉积和表征。
6. Structure and Optical Properties of Co-Sputtered Amorphous Silicon Tin Alloy Films for NIR-II Region Sensor [O] . Xiang-Dong Jiang, Ming-Cheng Li, Rui-Kang Guo, 2019

机译：用于NIR-II区域传感器的共溅射非晶硅锡合金薄膜的结构和光学性质
7. Preparation and Characterization of Anisotropic Films by Curing Hard Silicone Microspheres with Soft Silicone [O] . Gonzalez Lidia, Skov Anne Ladegaard 2012

机译：软硅胶固化硬质硅微球制备各向异性薄膜及其表征
8. Preparation and Characterization of Hydrogenated Amorphous-Silicon Films Produced by Ion Plating and Hydrogenated Amorphous-Boron Films Produced by Glow-Discharge Decomposition. Final Report, April 1, 1980-May 31, 1981 [R] . Cocks F.H, Jones, P. L. 1981

机译：添加到阅览室阅读软件下载与<<辉光放电分解制备离子镀和氢化非晶硼薄膜制备氢化非晶硅薄膜及其表征>>相似的文献。最终报告，1980年4月1日至1981年5月31日

The Preparation and Characterization of Copper Silicon Alloy Films

摘要

著录项

相似文献

相关主题

期刊订阅