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首页> 外文会议>Inorganic thin films and coatings >Electrical Characteristics and Microstructures of Bi_(2.9)Pr_(0.9)Ti_3O_(12) and Bi_(2.9)Pr_(0.92)Ti_(2.97)V_(0.03)O_(12) Thin Films
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Electrical Characteristics and Microstructures of Bi_(2.9)Pr_(0.9)Ti_3O_(12) and Bi_(2.9)Pr_(0.92)Ti_(2.97)V_(0.03)O_(12) Thin Films

机译：Bi_（2.9）Pr_（0.9）Ti_3O_（12）和Bi_（2.9）Pr_（0.92）Ti_（2.97）V_（0.03）O_（12）薄膜的电学特性和微观结构

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摘要

Bi_(2.9)Pr_(0.9)Ti_3O_(12)(BPT) and Bi_(2.9)Pr(0.9)Ti_(2.97)V(0.03)O_(12)(BPTV) thin films with random orientation were fabricated on Pt/Ti/SiO_2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. The experimental results indicated that Pr doping into Bi_4Ti_3O_(12) (BIT) result in a remarkable improvement in ferroelectric property. The remanent polarization (P_r) and coercive field (E_c) of the BPT film were 28 μC/cm~2 and 80 kV/cm, respectively. Furthermore, V substitution improves the P_r value of the BTVT film up to 43 μC/cm~2, which is much larger than that of the BPT film.
机译：在Pt / Ti上制备了随机取向的Bi_（2.9）Pr_（0.9）Ti_3O_（12）（BPT）和Bi_（2.9）Pr（0.9）Ti_（2.97）V（0.03）O_（12）（BPTV）薄膜。射频磁控溅射技术制备/ SiO_2 / Si衬底。这些样品具有没有优选取向的多晶双层钙钛矿结构，并且由具有随机取向的发达的棒状晶粒组成。实验结果表明，Pr掺杂到Bi_4Ti_3O_（12）（BIT）中可显着改善铁电性能。 BPT膜的剩余极化强度（P_r）和矫顽场（E_c）分别为28μC/ cm〜2和80 kV / cm。此外，V取代将BTVT膜的P_r值提高至43μC/ cm〜2，这比BPT膜的P_r值大得多。

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  • 来源
    《Inorganic thin films and coatings》|2012年|122-125|共4页
  • 会议地点 Guilin(CN)
  • 作者

    M. Chen; X. A. Mei; R. F. Liu; C. Q. Huang; J. Liu;

  • 作者单位

    School of Physics and Electronics, Hunan Institute of Science and Technology, Yueyang, 414000,China;

    School of Physics and Electronics, Hunan Institute of Science and Technology, Yueyang, 414000,China;

    School of Physics and Electronics, Hunan Institute of Science and Technology, Yueyang, 414000,China;

    School of Physics and Electronics, Hunan Institute of Science and Technology, Yueyang, 414000,China;

    School of Physics and Electronics, Hunan Institute of Science and Technology, Yueyang, 414000,China;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Ferroelectric; Dielectric; films;

    机译：铁电;电介质电影;

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