Electron holography of biased semiconductor junctions

机译：偏置半导体结的电子全息图

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A two-contact TEM biasing holder has been designed and constructed for use in the Cambridge Philips CM300 FEGTEM. A silicon semiconductor device has been examined using off-axis electron holography under a reverse bias of 0 to 3V. Reconstructed differential phase images reveal changes in the electrostatic potential with varying reverse bias. Examination of a Si device without bias using off-axis electron holography has also been performed, indicating a phase change of 2.8 radians across the p-n junction. This corresponds to a built-in voltage of 0.85V, close to the expected value demonstrating the truly quantitative nature of electron holography.

机译：已经设计和构造了用于剑桥飞利浦CM300 FEGTEM的两触点TEM偏置支架。已经使用离轴电子全息图在0至3V的反向偏压下检查了硅半导体器件。重建的差分相位图像揭示了静电电位随反向偏压的变化。还已经使用离轴电子全息图对无偏置的Si器件进行了测试，表明在p-n结上的相变为2.8弧度。这对应于0.85V的内置电压，接近预期值，表明电子全息的真正定量性质。

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《Institute of Physics Electron Microscopy and Analysis Group Conference, Sep 5-7, 2001, Dundee》|2001年|p.493-496|共4页
会议地点 Dundee(GB);Dundee(GB)
作者
A C Twitchett; R J Hallifax; R F Broom; S J Lloyd; P A Midgley;
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Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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2. Precise measurement of electric potential, field, and charge density profiles across a biased GaAs p-n tunnel junction by in situ phase-shifting electron holography [J] . Satoshi Anada, Kazuo Yamamoto, Hirokazu Sasaki, Journal of Applied Physics . 2017,第22期

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3. Silicon nanowires: Electron holography studies of doped p-n junctions and biased Schottky barriers [J] . He K., Cho J.-H., Jung Y., Nanotechnology . 2013,第11期

机译：硅纳米线：掺杂的p-n结和偏置的肖特基势垒的电子全息研究
4. Electron holography of biased semiconductor junctions [C] . A C Twitchett, R J Hallifax, R F Broom, Institute of Physics Electron Microscopy and Analysis Group conference . 2001

机译：偏置半导体结的电子全能
5. Characterization of electrostatic potential of compound semiconductors using off-axis electron holography. [D] . Chung, Suk. 2009

机译：使用离轴电子全息图表征化合物半导体的静电势。
6. Properties of nanocones formed on a surface of semiconductors by laser radiation: quantum confinement effect of electrons phonons and excitons [O] . Artur Medvid, Pavels Onufrijevs, Alexander Mychko 2011

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7. Direct comparison of differential phase contrast and off-axis electron holography for the measurement of electric potentials by the examination of reverse biased Si p-n junctions and III-V samples [O] . Benedikt Haas, David Cooper, Jean-Luc Rouviere 2016

机译：通过反向偏置Si P-N结的检查直接比较差分相位对比度和偏离轴电子全全息术进行电位测量电位。和III-V样品
8. Development of Reverse Biased p-n Junction Electron Emission [R] . Fowler, P., Muly, E. C. 1971

机译：反向偏压p-n结电子发射的研究进展

Electron holography of biased semiconductor junctions

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