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Investigation of optoelectronic properties of amorphous silicon germanium photodetectors

机译：非晶硅锗光电探测器的光电性能研究

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Cost consideration of the development of electronic devices is one of prime importance. One simple approach to lower the cost of production of photovoltaic and detectors is by using low cost materials such as amorphous silicon and germanium. These two semiconductors have different optoelectronic properties, such as energy gap, photoconductivity and absorption coefficient. The use of an alloy from the mixing of silicon with certain percentages of germanium would produce photodetectors with improved electronic characteristics and photoconductivity. A number of a-SiGe alloy thin films with different quantities of germanium have been fabricated using thermal vacuum evaporation technique. Conduction mechanism and activation energy of the prepared samples had been calculated and analyzed. The I-V characteristics, the photogenerated current and detectivity of these samples are subjected to measurement and discussion. Hall measurements are also conducted so to calculate the Hall I-V characteristics, Hall mobility, carrier concentration and type identification of the samples.
机译：电子设备开发的成本考虑是最重要的因素之一。降低光伏和探测器生产成本的一种简单方法是使用低成本材料，例如非晶硅和锗。这两种半导体具有不同的光电特性，例如能隙，光电导性和吸收系数。通过将硅与一定百分比的锗混合使用合金，可以生产出具有改善的电子特性和光电导性的光电探测器。使用热真空蒸发技术已经制造了许多具有不同锗含量的a-SiGe合金薄膜。计算并分析了所制备样品的导电机理和活化能。这些样品的I-V特性，光生电流和检测率都经过测量和讨论。还进行霍尔测量，以计算霍尔IV特性，霍尔迁移率，载流子浓度和样品类型识别。

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