• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference(CMP-MIC); 20080304-06; Fremont,CA(US) >Effect of Pad Break-in Time and In-Situ Pad Conditioning Duty Cycle for Porous and Non-Porous Pads in CMP
【24h】

Effect of Pad Break-in Time and In-Situ Pad Conditioning Duty Cycle for Porous and Non-Porous Pads in CMP

机译：CMP中多孔垫和非多孔垫的垫破损时间和就地垫调节占空比的影响

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

This paper explores shear force spectral fingerprinting to understand the effect of break-in time and in-situ pad conditioning duty cycle during copper CMP. Polishing is carried out on a system that has a unique ability to measure shear force in real-time. Using Fast Fourier Transformation, shear force data is converted from time domain to frequency domain. In the first set of experiments, porous and non-porous pads are 'broken-in' for different durations. Results show that, under identical polishing conditions, porous and non-porous pads have opposing effects on removal rate and coefficient of friction. Furthermore, shear force variance increases with pad break-in time and unique and consistent spectra emerge which show increasing fundamental peaks for longer break-in times. In the second set of experiments, pad conditioning is performed during copper CMP for 0, 25, 50, 75 and 100 percent of the total polishing time using the non-porous pad. Results show that removal rate and the coefficient of friction are not affected by conditioning duty cycle while shear force variance is found to increase with duty cycle up to 50 percent, after which saturation is reached. Further investigation of shear force spectra indicates spectral similarities among the 50, 75 and 100 percent duty cycles thus suggesting similar conditioning outcomes for these three processes. Furrow density Monte Carlo simulations of various break-in and conditioning methods noted above are performed. Results indicate that the fundamental peaks seen in the experimental results are most likely generated by the pad conditioner. This work underscores the importance of pad break-in to achieve early steady-state polishing through optimum break-in time and to extend pad life through an optimum conditioning duty cycle.
机译：本文探讨了剪切力谱指纹图谱，以了解铜CMP过程中的磨合时间和原位垫调节占空比的影响。抛光是在具有实时测量剪切力的独特能力的系统上进行的。使用快速傅里叶变换，将剪切力数据从时域转换到频域。在第一组实验中，多孔和无孔垫在不同的持续时间内被“磨合”。结果表明，在相同的抛光条件下，多孔和无孔垫对去除速率和摩擦系数具有相反的影响。此外，剪切力方差随垫的磨合时间而增加，并且出现了独特且一致的光谱，这些光谱显示出更长的磨合时间下，基本峰的增加。在第二组实验中，使用无孔垫在铜CMP过程中进行了总抛光时间的0％，25％，50％，75％和100％的垫调节。结果表明，去除率和摩擦系数不受调节占空比的影响，而剪切力变化随占空比的增加而增加，直至达到50％，之后达到饱和。对剪切力谱的进一步研究表明，在50％，75％和100％占空比之间的光谱相似性，因此表明这三个过程的调节结果相似。进行了上述各种侵入和调节方法的沟槽密度蒙特卡罗模拟。结果表明，在实验结果中看到的基本峰最有可能是垫调节剂产生的。这项工作强调了磨盘磨合的重要性，即通过最佳磨合时间来实现早期稳态抛光，并通过最佳的调节占空比来延长磨垫的使用寿命。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号