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Electron temperature in semiconductors in quantizing magnetic fields

机译:量化磁场中半导体中的电子温度

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The impact of the heating electronic field and longitudinal quantizing magnetic field (within quantum limit and under random degree of quantization) on electronic gas of non-degenerate semiconductors has been investigated by means of the technique of effective electronic temperature. The relaxation by the energy and impulse on the acoustic phonons has been considered. The difference of electronic temperature dependence on the magnetic field intensity has been obtained. In the quantum limit the inelasticity of the scattering of carriers , localized in the plane orthogonal to the magnetic field, removes their heating, making the power transfer to crystalline lattice rather sufficient.
机译:借助于有效电子温度技术,研究了加热电场和纵向量化磁场(在量子限度内以及在随机量化程度内)对未退化半导体的电子气的影响。已经考虑了声子在能量和脉冲上的松弛。已经获得了电子温度依赖于磁场强度的差异。在量子极限中,载流子散射的非弹性(位于垂直于磁场的平面中)消除了载流子的加热,从而使向晶格的功率转移相当充分。

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