Photodetectors on the base of CdTe and on the base of InSe for the optical coherent tomography

机译：基于CdTe和InSe的光电探测器，用于光学相干断层扫描

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The basic photo-electric properties of contacts of oxide semiconductor (In_2O_3, SnO_2, ITO) with cadmium telluride and with indium selenide are analyzed from the point of view of their use as photodetectors for an optical tomography.

机译：从氧化物半导体（In_2O_3，SnO_2，ITO）与碲化镉和硒化铟的接触用作光学层析成像光电探测器的角度，分析了它们的基本光电性能。

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来源
《International Conference on Correlation Optics; 20030916-20030919; Chernivtsi; UA》|2003年|P.398-401|共4页
会议地点 Chernivtsi(UA)
作者
V.P. Makhniy; Ya.M. Barasyuk; M.V. Demych; Ye.V. Stets; O.I. Yanchuk;
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作者单位

Chernivtsy National University, 2 Kotsyubinsky Str., Chernivtsi, 58012, Ukraine;

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会议组织
原文格式 PDF
正文语种 eng
中图分类应用光学;
关键词
photodetector; cadmium telluride; indium monoselenide; spectrum of photoconductivity;

机译：光电探测器碲化镉单硒化铟光电导光谱;

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4. Photodetectors on the base of CdTe and on the base of InSe for the optical coherent tomography [C] . V.P. Makhniy, Ya.M. Barasyuk, M.V. Demych, International Conference on Correlation Optics . 2004

机译：CDTE底部的光电探测器和光学相干断层扫描的内部基座
5. Characterization of CdTe Based Photodetectors, ZnO Nanowires and Nanostructures for Photonic Applications. [D] . Farid, Sidra. 2016

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机译：基于基于石墨烯的光电探测器集成的超高效光学混合传输，用于相干检测

Photodetectors on the base of CdTe and on the base of InSe for the optical coherent tomography

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