X-ray analysis of strain relaxation in multilayer systems In_xGa_(1-x)As_(1-y)N_y/GaAs

机译：多层系统In_xGa_（1-x）As_（1-y）N_y / GaAs的应变松弛的X射线分析

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The multilayer nano-scale systems contained one or two quantum wells In_xGa_(1-x)As_(1-y)N_y have been investigated by double-crystal X-ray diffractometry. The growth conditions, composition of initial compounds were considered. It is shown that the processes of interdiffusion of In and Ga atoms nearby the interfaces of layer with QW were took place and influenced on the properties of considered multilayer systems. The principle structural parameters of multilayered In_xGa_(1-x)As_(1-y) N_y/GaAs systems and contents of nitrogen in the quantum well and buffer layers were estimated.

机译：通过双晶体X射线衍射法研究了包含一个或两个量子阱In_xGa_（1-x）As_（1-y）N_y的多层纳米级系统。考虑了生长条件，初始化合物的组成。结果表明，In和Ga原子在层与QW的界面附近发生了相互扩散的过程，并影响了所考虑的多层体系的性能。估算了多层In_xGa_（1-x）As_（1-y）N_y / GaAs体系的基本结构参数以及量子阱和缓冲层中氮的含量。

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来源
《International Conference on Correlation Optics; 20030916-20030919; Chernivtsi; UA》|2003年|P.229-237|共9页
会议地点 Chernivtsi(UA)
作者
Pessa M.; Pavelescu E.M.; Fodchuk I.M.; Gevyk V.B.; Shpak A.P.; Molodkin V.B.; Kislovskii E.N.; Olikhovskii S.I.;
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Chernivtsi national university, Kotsubynskogo str., 2, Chernivtsi, 58012, Ukraine;

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原文格式 PDF
正文语种 eng
中图分类应用光学;
关键词
multilayered structure; rocking curves; interdiffusion; strain; X-ray double difiractometry; takagi-taupin equations;

机译：多层结构；摇摆曲线；相互扩散；应变； X射线双衍射；高木-陶平方程;

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1. Strain relaxation by < 100 > misfit dislocations in dilute nitride In_xGa_(1-x)As_(1-y)N_y/GaAs quantum wells [J] . E. C. Young, A. N. Koveshnikov, S. Tixier, Physica Status Solidi. A, Applications and Materials Science . 2005,第15期

机译：稀氮化物In_xGa_（1-x）As_（1-y）N_y / GaAs量子阱中由<100>位错错位引起的应变弛豫
2. Effects of hydrogenation on the local structure of In_xGa_(1-x)As_(1-y)N_y quantum wells and GaAs_(1-y)N_y epilayers [J] . G. Ciatto, H. Renevier, M. G. Proietti, Physical review. B, Condensed Matter And Materials Physics . 2005,第8期

机译：氢化对In_xGa_（1-x）As_（1-y）N_y量子阱和GaAs_（1-y）N_y外延层局部结构的影响
3. Influence of k • p Formalisms on the Band Structure of In_xGa_(1-x)As_(1-y)N_y/GaAs Quantum Well: A Comparison of 8-Band and 10-Band Models [J] . Say Tyam NG, Wei Jun FAN, Yu Xing DANG, Japanese Journal of Applied Physics. Part 2, Letters . 2005,第20a23期

机译：k•p形式主义对In_xGa_（1-x）As_（1-y）N_y / GaAs量子阱的能带结构的影响：8波段和10波段模型的比较
4. X-ray analysis of strain relaxation in multilayer systems In_xGa_(1-x)As_(1-y)N_y/GaAs [C] . Pessa M., Pavelescu E.M., Fodchuk I.M., International Conference on Correlation Optics . 2004

机译：多层系统中应变松弛的X射线分析in_xga_（1-x）AS_（1-Y）N_Y / GaAs
5. Oxides of lanthanum(1-x) strontium(x) cobalt(1-y) iron(y) oxygen(3) for oxygen and electrical delivery systems. [D] . Tai, Lone-Wen Frank. 1994

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6. Strain Relaxation in GaSb/GaAs(111)A HeteroepitaxyUsing Thin InAs Interlayers [O] . Akihiro Ohtake, *, Takaaki Mano, 2018

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X-ray analysis of strain relaxation in multilayer systems In_xGa_(1-x)As_(1-y)N_y/GaAs

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