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首页> 外文会议>International Conference on Nitride Semiconductors(ICNS-5); 20030525-20030530; Nara; JP >Structural and optical properties of InGaN/GaN triangular-shaped quantum wells with different emission wavelengths
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Structural and optical properties of InGaN/GaN triangular-shaped quantum wells with different emission wavelengths

机译：不同发射波长的InGaN / GaN三角量子阱的结构和光学性质

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摘要

We investigated the structural and optical properties of InGaN/GaN triangular-shaped multiple quantum well (MQW) structures as a function of emission wavelengths. As the peak wavelength became longer, the average In composition increased linearly and the peak linewidth in the PL measurements became broad. Also, the PL intensity showed the highest value at 23% In and the interface showed the best abruptness, but the lowest intensity at 30% In. A decrease in emission intensity is ascribed to the crystalline imperfection such as defects and/or impurities caused by increased misfit strain in the QW regions with relatively higher In composition.
机译：我们研究了InGaN / GaN三角多量子阱（MQW）结构的结构和光学特性，该结构是发射波长的函数。随着峰值波长变长，平均In组成线性增加，PL测量中的峰值线宽变宽。同样，PL强度在23％In时显示出最高值，界面显示出最佳的突变率，而在30％In时显示出最低的强度。发射强度的降低归因于结晶缺陷，例如由In组成相对较高的QW区域中的失配应变增加引起的缺陷和/或杂质。

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