Sub-microscopic transient lens spectroscopy of InGaN/GaN quantum wells

机译：InGaN / GaN量子阱的亚显微瞬态透镜光谱

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Transient lens (TL) spectroscopy was developed with sub-micrometer spatial resolution to observe the temporal and special behavior of the nonradiative processes of carrier dynamics in InGaN/GaN quantum wells (QW). We have observed the carrier density dynamics and the thermal dynamics in the TL signals with a nanosecond pulsed laser. We have also observed TL and photoluminescence (PL) signals by using near-field scanning optical microscopy (NSOM), and find that both PL and TL images are correlated and exhibit submicron scale spatial inhomogeneity.

机译：开发了具有亚微米空间分辨率的瞬态透镜（TL）光谱仪，以观察InGaN / GaN量子阱（QW）中载流子动力学非辐射过程的时间和特殊行为。我们已经观察到了纳秒脉冲激光在TL信号中的载流子密度动态和热动态。我们还通过使用近场扫描光学显微镜（NSOM）观察了TL和光致发光（PL）信号，发现PL和TL图像都相关并且显示出亚微米级的空间不均匀性。

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来源
《International Conference on Nitride Semiconductors(ICNS-5); 20030525-20030530; Nara; JP》|2003年|P.368-371|共4页
会议地点 Nara(JP);Nara(JP)
作者
Koichi Okamoto; Shigeo Fujita; Yoichi Kawakami; Axel Scherer;
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作者单位

Department of Electrical Engineering, California Institute of Technology, Pasadena, CA 91125, USA;

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原文格式 PDF
正文语种 eng
中图分类化合物半导体;
关键词
near-field scanning microscopy and spectroscopy; charge carriers: generation, recombination, lifetime, and trapping; quantum wells; quantum wells;

机译：近场扫描显微镜和光谱学;载流子：产生，重组，寿命和捕获;量子阱;量子阱;

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专利

1. Sub-microscopic transient lens spectroscopy of InGaN/GaN quantum wells [J] . Okamoto K., Fujita S., Kawakami Y., Physica status solidi, B. Basic research . 2003,第2期

机译：InGaN / GaN量子阱的亚显微瞬态透镜光谱
2. Determination of size dependent carrier capture in InGaN/GaN quantum nanowires by femto-second transient absorption spectroscopy: effect of optical phonon, electron-electron scattering and diffusion [J] . Chouksey S., Sreenadh S., Ganguly S., Nanotechnology . 2019,第19期

机译：通过毫微秒瞬态吸收光谱法测定IngaN / GaN量子纳米线中尺寸依赖性载体捕获：光学声子，电子散射和扩散的影响
3. Deep-level transient spectroscopy studies of light-emitting diodes based on multiple-quantum-well InGaN/GaN structure [J] . Mikhail M.Sobolev, Natalia M.Shmidt Physica, B. Condensed Matter . 2009,第23a24期

机译：基于多量子阱InGaN / GaN结构的发光二极管的深层瞬态光谱研究
4. Sub-microscopic transient lens spectroscopy of InGaN/GaN quantum wells [C] . Koichi Okamoto, Shigeo Fujita, Yoichi Kawakami, International conference on nitride semiconductors . 2003

机译：Ingan / GaN量子阱的亚微观瞬态透镜光谱
5. Coherent nonlinear optical spectroscopy of InGaN disks in GaN nanowires. [D] . Nelson, Cameron R. 2017

机译：GaN纳米线中InGaN盘的相干非线性光学光谱。
6. Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells [O] . George Christian, Menno Kappers, Fabien Massabuau, 2018

机译：掺杂Si的InGaN底层对不同数量的量子阱的InGaN / GaN量子阱结构的光学性能的影响
7. Nonradiative recombination processes of carriers in InGaN/GaN probed by the microscopic transient lens spectroscopy [O] . Okamoto K, Inoue K, Kawakami Y, 2003

机译：显微瞬态透镜光谱法探测的InGaN / GaN中载流子的非辐射复合过程
8. MBE Growth and Properties of GaN, InGaN and GaN/InGaN Quantum Well Structures for Laser Diode Applications [R] . Schetzina, J. F. 2001

机译：用于激光二极管应用的GaN，InGaN和GaN / InGaN量子阱结构的mBE生长和性质

Sub-microscopic transient lens spectroscopy of InGaN/GaN quantum wells

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