Hall effect measurement of InAsN alloy films grown directly on GaAs(001) substrates by RF-MBE

机译：通过RF-MBE测量直接在GaAs（001）衬底上生长的InAsN合金膜的霍尔效应测量

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Due to the huge bandgap-bowing, a red shift of the band gap energy with increasing nitrogen content is expected for the InAsN alloy. However, a blue shift of the fundamental absorption edge has been observed in a recent study. This result seems to be significantly affected by the Burstein-Moss effect because the InAsN alloy has a large carrier concentration. The Burstein-Moss effect should be ruled out in order to characterize the real band gap energy. In this paper, Hall effect measurements were performed to estimate the carrier concentration of the InAsN alloy films and the Burstein-Moss shift energy was evaluated. Excluding the Burstein-Moss shift energy, a red shift of the real band-gap energy with increasing nitrogen content was observed.

机译：由于巨大的带隙波动，InAsN合金的带隙能量随氮含量的增加而发生红移。然而，在最近的研究中观察到基本吸收边缘的蓝移。该结果似乎受到Burstein-Moss效应的显着影响，因为InAsN合金的载流子浓度很高。应该排除Burstein-Moss效应，以便表征真实的带隙能量。在本文中，进行了霍尔效应测量以估计InAsN合金膜的载流子浓度，并评估了Burstein-Moss位移能。除Burstein-Moss位移能以外，观察到实际带隙能随氮含量的增加而发生红移。

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《International Conference on Nitride Semiconductors(ICNS-5); 20030525-20030530; Nara; JP》|2003年|P.2765-2768|共4页
会议地点 Nara(JP);Nara(JP)
作者
M. Kuroda; R. Katayama; S. Nishio; K. Onabe; Y. Shiraki;
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作者单位

Department of Advanced Materials Science, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8562, Japan;

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原文格式 PDF
正文语种 eng
中图分类化合物半导体;
关键词
structure and morphology; thickness; crystalline orientation and texture; III-V semiconductors; III-V and II-VI semiconductors; III-V semiconductors; molecular, atomic, ion, and chemical beam epitaxy;

机译：结构和形态;厚度;晶体取向和织构; III-V族半导体; III-V和II-VI族半导体; III-V族半导体;分子，原子，离子和化学束外延;

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专利

1. RF-MBE growth of InAsN layers on GaAs (001) substrates using a thick InAs buffer layer [J] . Susumu Nishio, Atsushi Nishikawa, Ryuji Katayama, Journal of Crystal Growth . 2003,第1a4期

机译：使用厚InAs缓冲层在GaAs（001）衬底上进行InAsN层的RF-MBE生长
2. Multi-Valued Planar Hall Resistance Manipulated by Current Induced Magnetic Field in Fe Films Grown on GaAs(001) Substrates [J] . Sungwon Khym, Taehee Yoo, Hakjoon Lee, . 2012,第9期

机译：GaAs（001）衬底上生长的铁膜中电流感应磁场操纵的多值平面霍尔电阻
3. InAsN quantum dots grown on GaAs(001) substrates by MOVPE [J] . S. Kuboya, Q. T. Thieu, F. Nakajima, Physica Status Solidi. C, Conferences and critical reviews . 2007,第7期

机译：通过MOVPE在GaAs（001）衬底上生长的InAsN量子点
4. Hall effect measurement of InAsN alloy films grown directly on GaAs(001) substrates by RF-MBE [C] . M. Kuroda, R. Katayama, S. Nishio, International conference on nitride semiconductors . 2003

机译：通过RF-MBE直接在GaAs（001）基材上直接生长的InAsn合金薄膜的霍尔效应测量
5. Optoelectronic devices based on low threshold strained InGaAs/GaAs quantum well lasers grown on structured substrates [D] . Frateschi, Newton Cesario 1993

机译：基于在结构化衬底上生长的低阈值应变InGaAs / GaAs量子阱激光器的光电器件
6. High-Quality 100 nm Thick InSb Films Grown on GaAs(001)Substrates with an InxAl1–xSb Continuously Graded Buffer Layer [O] . Soo Seok Kang, Suk In Park, Sang Hoon Shin, 2018

机译：GaAs（001）上生长的高质量100 nm厚InSb膜具有InxAl1-xSb连续渐变缓冲层的基板
7. High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an InxAl1–xSb Continuously Graded Buffer Layer [O] . Soo Seok Kang, Suk In Park, Sang Hoon Shin, 2018

机译：高质量100nm厚的INCB薄膜在GaAs（001）底板上，具有inxal1-xsb连续分级缓冲层
8. Study of substrate diffusion in epitaxial n-type CdSe films grown on GaAs (001) by pulsed laser ablation [R] . Park, J. , Rouleau, C. M. , Lowndes, D. H. 1998

机译：用脉冲激光烧蚀研究Gaas（001）上生长的外延n型Cdse薄膜的衬底扩散

Hall effect measurement of InAsN alloy films grown directly on GaAs(001) substrates by RF-MBE

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