Growth of high-quality non-polar AlN on 4H-SiC(11-20) substrate by molecular-beam epitaxy

机译：分子束外延在4H-SiC（11-20）衬底上生长高质量非极性AlN

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Non-polar AlN epitaxial growth on SiC substrates with the (11-20) face, which is parallel to the < 0001 > direction, has been investigated. AlN(11-20) epilayers were grown on 6H- and 4H-SiC(11-20) substrates by molecular-beam epitaxy (MBE) using elemental Al and rf plasma-excited nitrogen. The crystalline structure of the AlN layer was strongly influenced by the stacking structure of the SiC substrate. A considerably smooth AlN(11-20) layer with an rms roughness of 0.3 nm was obtained on the 4H-SiC(11-20) substrate. From the results of X-ray diffraction (XRD), the superior crystalline quality of the AlN(11 -20) layer on the 4H-SiC(11-20) substrate was clearly shown.

机译：已经研究了在（11-20）面平行于<0001>方向的SiC衬底上的非极性AlN外延生长。使用元素铝和射频等离子体激发氮，通过分子束外延（MBE）在6H和4H-SiC（11-20）衬底上生长AlN（11-20）外延层。 AlN层的晶体结构受到SiC衬底的堆叠结构的强烈影响。在4H-SiC（11-20）基板上获得了均方根粗糙度为0.3 nm的相当光滑的AlN（11-20）层。根据X射线衍射（XRD）的结果，清楚地显示了4H-SiC（11-20）衬底上的AlN（11 -20）层的优异结晶质量。

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《International Conference on Nitride Semiconductors(ICNS-5); 20030525-20030530; Nara; JP》|2003年|P.2502-2505|共4页
会议地点 Nara(JP);Nara(JP)
作者
N. Onojima; J. Suda; T. Kimoto; H. Matsunami;
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作者单位

Department of Electronic Science and Engineering, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan;

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原文格式 PDF
正文语种 eng
中图分类化合物半导体;
关键词
atomic force microscopy (AFM); structure and morphology; thickness; crystalline orientation and texture; III-V semiconductors; molecular, atomic, ion, and chemical beam epitaxy;

机译：原子力显微镜（AFM）;结构和形态;厚度;晶体取向和织构; III-V族半导体;分子，原子，离子和化学束外延;

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专利

1. High-quality nonpolar 4H-AlN grown on 4H-SiC (1120) substrate by molecular-beam epitaxy [J] . Masahiro Horita, Jun Suda, Tsunenobu Kimoto Applied Physics Letters . 2006,第11期

机译：通过分子束外延在4H-SiC（1120）衬底上生长的高质量非极性4H-AlN
2. Impact of Ⅲ/Ⅴ ratio on polytype and crystalline quality of AlN grown on 4H-SiC (1120) substrate by molecular-beam epitaxy [J] . M. Horita, J. Suda, T. Kimoto Physica Status Solidi. C, Conferences and critical reviews . 2006,第6期

机译：Ⅲ/Ⅴ比对分子束外延生长在4H-SiC（1120）衬底上生长的AlN的类型和晶体质量的影响
3. Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC(1120) [J] . S.M. Bishop, J.-S. Park, J. Gu, Journal of Crystal Growth . 2007,第1期

机译：4H-SiC（1120）上非极性AlN和GaN薄膜的生长演变和对位外延
4. Growth of high-quality non-polar AlN on 4H-SiC(11-20) substrate by molecular-beam epitaxy [C] . N. Onojima, J. Suda, T. Kimoto, International conference on nitride semiconductors . 2003

机译：分子束外延的4H-SiC（11-20）衬底上的高质量非极性ALN的生长
5. Epitaxy of boron phosphide on AlN, 4H-SiC, 3C-SiC and ZrB2 substrates. [D] . Padavala, Balabalaji. 2016

机译：AlN，4H-SiC，3C-SiC和ZrB2衬底上磷化硼的外延。
6. High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography [O] . Lisheng Zhang, Fujun Xu, Jiaming Wang, -1

机译：通过纳米压印光刻技术在纳米图案蓝宝石衬底上进行高质量的AlN外延
7. High-quality nonpolar 4H-AlN grown on 4H-SiC (11(2)over-bar20) substrate by molecular-beam epitaxy [O] . Horita M, Suda J, Kimoto T 2006

机译：通过分子束外延在4H-SiC（11（2）over-bar20）衬底上生长的高质量非极性4H-AlN

Growth of high-quality non-polar AlN on 4H-SiC(11-20) substrate by molecular-beam epitaxy

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