Growth and evaluation of GaN with SiN interlayer by MOCVD

机译：具有SiN中间层的GaN的MOCVD生长和评估

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GaN epilayers grown with introducing a high-temperature SiN interlayer by metalorganic chemical vapour deposition (MOCVD) were investigated by means of XRD, AFM, and TEM. SiN_4 was used as Si source for SiN growth. It was found that by inserting the SiN layer, the subsequently grown GaN layers have a lower threading dislocation density with respect to that in the conventional GaN films. The dislocations were observed to terminate at the SiN/GaN interface, where Si incorporations may occur. It suggests that the quality of the GaN epilayers has been improved by introducing the optimised grown HT-SiN interlayer.

机译：通过XRD，AFM和TEM研究了通过金属有机化学气相沉积（MOCVD）引入高温SiN中间层而生长的GaN外延层。 SiN_4用作SiN生长的Si源。已经发现，通过插入SiN层，随后生长的GaN层具有比常规GaN膜中更低的穿线位错密度。观察到位错终止于可能发生Si结合的SiN / GaN界面。这表明通过引入优化的生长HT-SiN中间层可以改善GaN外延层的质量。

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《International Conference on Nitride Semiconductors(ICNS-5); 20030525-20030530; Nara; JP》|2003年|P.2077-2081|共5页
会议地点 Nara(JP);Nara(JP)
作者
Yoshiki Naoi; Toshihiko Tada; Hongdong Li; Nan Jiang; Shiro Sakai;
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作者单位

Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类化合物半导体;
关键词
defects and impurities: doping, implantation, distribution, concentration, etc.; chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.);

机译：缺陷和杂质：掺杂，注入，分布，浓度等；化学气相沉积（包括等离子增强CVD，MOCVD等）;

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专利

1. Improvement of the quality of GaN epilayer by combining a SiN_x interlayer and changed GaN growth mode [J] . Dechao Yang, Hongwei Liang, Yu Qiu, Journal of materials science . 2013,第8期

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2. MOCVD growth of GaN layer on InN interlayer and relaxation of residual strain [J] . Keon-Hun Lee, Sung Hyun Park, Jong Hack Kim, Thin Solid Films . 2010,第22期

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3. MOCVD growth of GaN on Si(111) substrates using an ALD-grown Al_2O_3 interlayer [J] . William E. Fenwick, Nola Li, Tianming Xu, Journal of Crystal Growth . 2009,第18期

机译：使用ALD生长的Al_2O_3中间层在Si（111）衬底上MOGaN生长GaN
4. Growth and evaluation of GaN with SiN interlayer by MOCVD [C] . Yoshiki Naoi, Toshihiko Tada, Hongdong Li, International conference on nitride semiconductors . 2003

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Growth and evaluation of GaN with SiN interlayer by MOCVD

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