High voltage GaN-based power HEMTs with field plate technique: Breakdown voltage and switching characteristics

机译：采用场板技术的高压GaN基功率HEMT：击穿电压和开关特性

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We report high breakdown voltage AlGaN/GaN HEMTs using the field plate (FP) technique and demonstration of very high current density switching under high applying voltage condition. The fabricated FP-HEMT exhibited the high breakdown voltage of 594 V and achieved the high current density of 850 A/cm~2 under the high supplied voltage of 300 V. This switching current density was ten times larger than that of Si power MOSFETs.

机译：我们报告了使用场板（FP）技术的高击穿电压AlGaN / GaN HEMT，并演示了在高施加电压条件下非常高的电流密度开关。制成的FP-HEMT在300 V的高电源电压下具有594 V的高击穿电压，并实现了850 A / cm〜2的高电流密度。该开关电流密度是Si功率MOSFET的十倍。

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来源
《International Conference on Nitride Semiconductors(ICNS-5); 20030525-20030530; Nara; JP》|2003年|P.2347-2350|共4页
会议地点 Nara(JP);Nara(JP)
作者
Yoshiharu Takada; Wataru Saito; Masahiko Kuraguchi; Ichiro Omura; Kunio Tsuda;
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作者单位

Toshiba R D Center 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan;

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原文格式 PDF
正文语种 eng
中图分类化合物半导体;
关键词
metal-insulator-semiconductor structures (including semiconductor-to-insulator); field effect devices;

机译：金属-绝缘体-半导体结构（包括半导体到绝缘体）；场效应器件;

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专利

1. The effect of a HfO2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT [J] . 毛维, 杨翠, 郝跃, 中国物理：英文版 . 2011,第009期

机译：HfO2绝缘体对场镀GaN基HEMT中击穿电压提高的影响
2. The effect of a Hf02 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT [J] . Mao Wei, Yang Lin-An, Yang Ling, 中国物理：英文版 . 2011,第009期

机译：Hf02绝缘体对场镀GaN基HEMT中击穿电压提高的影响
3. Study of high breakdown voltage GaN-based current-aperture vertical electron transistor with source-connected field-plates for power applications [J] . Wang Haiyong, Mao Wei, Cong Guanyu, Semiconductor science and technology . 2018,第7期

机译：具有源极连接场板的高击穿电压GaN基电流孔径垂直电子晶体管的研究
4. High voltage GaN-based power HEMTs with field plate technique: Breakdown voltage and switching characteristics [C] . Yoshiharu Takada, Wataru Saito, Masahiko Kuraguchi, International conference on nitride semiconductors . 2003

机译：基于高压GaN的功率HEMTS具有现场板技术：击穿电压和开关特性
5. Design techniques for high-frequency high-efficiency high-voltage soft-switched power converters [D] . Xue, Jing. 2016

机译：高频高效高压软交换电源转换器的设计技术
6. Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices [O] . Huolin Huang, Feiyu Li, Zhonghao Sun, 2018

机译：宽带隙GaN基HEMT功率器件中取决于高温操作的阈值电压稳定性的模型开发
7. Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Gate Field-Plate, Source Field-Plate and Drain Field Plate [O] . Biyan Liao, Quanbin Zhou, Jian Qin, 2019

机译：使用栅极板，源场板和排水场板仿真AlGaN / GaN Hemts'击穿电压增强

High voltage GaN-based power HEMTs with field plate technique: Breakdown voltage and switching characteristics

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