Si doping effects on the electrical and structural properties of high Al composition Al_xGa_(1-x)N films grown by MOCVD

著录项

• 来源
  《International Conference on Nitride Semiconductors(ICNS-5); 20030525-20030530; Nara; JP》|2003年|P.2010-2013|共4页
• 会议地点 Nara(JP);Nara(JP)
• 作者

  P. Cantu; S. Keller; F. Wu; P. Waltereit; A. E. Romanov; U. K. Mishra; J. S. Speck; S. P. DenBaars;

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• 作者单位

  Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, CA 93106, USA;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类 化合物半导体;
• 关键词

  experimental determination of defects by diffraction and scattering; direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, X-ray topography, etc.); point defects (vacancies, interstitials, color centers, etc.);

  机译：通过衍射和散射实验确定缺陷；直接观察位错和其他缺陷（蚀刻坑，装饰，电子显微镜，X射线形貌等）；点缺陷（空位，间隙，色心等）;