Field-compensated quaternary InAlGaN/GaN quantum wells

机译：场补偿四元InAlGaN / GaN量子阱

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We demonstrate that it is possible to reduce significantly the internal polarisation fields in InAlGaN/GaN quantum wells (QWs), provided that the composition of the quaternary layer is appropriate. We have experimentally estimated an internal field of 2.65 mV/A in In_(0.085)Al_(0.285)Ga_(0.63)N/GaN QWs, which is a factor of four smaller than in "equivalent" GaN/Al_(0.15)Ga_(0.85)N QWs. Preliminary optical pumping experiments on laser structures using as active medium In_(0.085)Al_(0.285)Ga_(0.63)N/GaN QWs have shown lower threshold than GaN/AlGaN laser structures at room temperature.

机译：我们证明，只要四元层的成分合适，就可以显着减少InAlGaN / GaN量子阱（QW）中的内部极化场。我们已经通过实验估算出In_（0.085）Al_（0.285）Ga_（0.63）N / GaN QWs的内部电场为2.65 mV / A，这比“等效” GaN / Al_（0.15）Ga_（ 0.85）N个QW。使用In_（0.085）Al_（0.285）Ga_（0.63）N / GaN QW作为活性介质的激光结构的初步光泵浦实验显示，在室温下其阈值低于GaN / AlGaN激光结构。

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来源
《International Conference on Nitride Semiconductors(ICNS-5); 20030525-20030530; Nara; JP》|2003年|P.301-304|共4页
会议地点 Nara(JP);Nara(JP)
作者
F. Kalaietzakis; M. Androulidaki; N. T. Pelekanos; E. Dimakis; E. Bellet-Amalric; D. Jalabert; D. Cengher; K. Tsagaraki; E. Aperathitis; G. Konstantinidis; A. Georgakilas;
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Microelectronics Research Group, FORTH/IESL, P.O. Box 1527, 71110 Heraklion, Greece;

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原文格式 PDF
正文语种 eng
中图分类化合物半导体;
关键词
quantum wells; strain-induced piezoelectric fields; quantum wells;

机译：量子阱应变感应压电场量子阱;

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专利

1. Field-compensated quaternary InAlGaN/GaN quantum wells [J] . Kalaitzakis F., Androulidaki M., Pelekanos NT., Physica status solidi, B. Basic research . 2003,第2期

机译：场补偿四元InAlGaN / GaN量子阱
2. Influence of residual oxygen impurity in quaternary InAlGaN multiple-quantum-well active layers on emission efficiency of ultraviolet light-emitting diodes on GaN substrates [J] . Takashi Kyono, Hideki Hirayama, Katsushi Akita, Journal of Applied Physics . 2006,第11期

机译：四元InAlGaN多量子阱有源层中残留的氧杂质对GaN衬底上紫外发光二极管发射效率的影响
3. Significant improvements of quantum efficiency of quaternary InAlGaN UV-LEDs on GaN substrates [J] . Takashi Kyono, Hideki Hirayama, Katsushi Akita, Physica Status Solidi. C, Conferences and critical reviews . 2005,第7期

机译：GaN衬底上四元InAlGaN UV-LED量子效率的显着提高
4. Field-compensated quaternary InAlGaN/GaN quantum wells [C] . F. Kalaietzakis, M. Androulidaki, N. T. Pelekanos, International conference on nitride semiconductors . 2003

机译：现场补偿第四纪inalGan / GaN量子阱
5. Optical Properties of Ultrathin In(Ga)As/GaAs and In(Ga)N/GaN Quantum Wells [D] . Maidaniuk, Yurii. 2020

机译：超薄In（Ga）AS / GaAs和（Ga）n / GaN量子阱的光学性质
6. Epitaxial Growth of GaN Core and InGaN/GaN MultipleQuantum Well Core/Shell Nanowires on a Thermally Conductive BerylliumOxide Substrate [O] . MuhammadAli Johar, Aadil Waseem, Mostafa Afifi Hassan, 2020

机译：GaN核和InGaN / GaN多重外延生长导热铍上的量子阱核/壳纳米线氧化物基板
7. Impact of Gate Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs [O] . Rzin, Mehdi, Routoure, Jean-Marc, Guillet, Bruno, 2017

机译：栅漏间距对原位SiN钝化InAlGaN / GaN MIS-HEMT的低频噪声性能的影响

Field-compensated quaternary InAlGaN/GaN quantum wells

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