Coexistence in photoluminescence of free exciton and bound exciton in low nitrogen content GaInNAs layers

机译：氮含量低的GaInNAs层中自由激子和结合激子的光致发光共存

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We study by time resolved photoluminescence (TRPL) low N and In content GaInNAs (GINA) alloy layers grown by molecular beam epitaxy on GaAs substrate. The TRPL experiments show the coexistence and the carrier exchanges between bound- and free-exciton states, in this kind of alloy. Temperature dependent experiments demonstrate the thermal ionization of bound excitons and the high temperature stability of free excitons. For a temperature higher than 60 K the PL spectra are totally dominated by the free exciton line.

机译：我们通过在GaAs衬底上通过分子束外延生长的时间分辨光致发光（TRPL）低N和In含量GaInNAs（GINA）合金层进行研究。 TRPL实验表明，在这种合金中，束缚态和自由激发态之间共存和载流子交换。温度依赖性实验证明了结合的激子的热电离和游离激子的高温稳定性。对于高于60 K的温度，PL光谱完全由自由激子线控制。

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来源
《International Conference on Nitride Semiconductors(ICNS-5); 20030525-20030530; Nara; JP》|2003年|P.2631-2634|共4页
会议地点 Nara(JP);Nara(JP)
作者
R. Intartaglia; T. Taliercio; B. Gil; P. Lefebvre; P. Valvin; T. Bretagnon; M.-A. Pinault; E. Tournie;
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作者单位

Groupe d'Etude des Semiconducteurs -CNRS -Universite Montpellier II, Case Courrier 074, 34095 Montpellier Cedex 5, France;

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原文格式 PDF
正文语种 eng
中图分类化合物半导体;
关键词
excitons and related phenomena; III-V semiconductors; III-V semiconductors;

机译：激子及相关现象; III-V族半导体; III-V族半导体;

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1. How free exciton-exciton annihilation lets bound exciton emission dominate the photoluminescence of 2D-perovskites under high-fluence pulsed excitation at cryogenic temperatures [J] . Milian Kaiser, Yang Li, Jonas Schwenzer, Journal of Applied Physics . 2021,第12期

机译：自由激子激的湮灭如何让绑定的激子排放在低流量脉冲激发下在低温温度下占据2D-Perovskites的光致发光
2. Near-infrared near-field photoluminescence imaging spectroscopy of exciton localized states in GaInNAs/GaAs quantum wells due to nonuniform distribution of nitrogen [J] . Ryosuke Kubota, Koji Nakashima, Dai Mizuno, Journal of Nanophotonics . 2007,第Null期

机译：由于氮的分布不均匀，GaInNAs / GaAs量子阱中激子局域态的近红外近场光致发光成像光谱
3. Near-infrared near-field photoluminescence imaging spectroscopy of exciton localized states in GaInNAs/GaAs quantum wells due to nonuniform distribution of nitrogen [J] . Ryosuke Kubota, Koji Nakashima, Dai Mizuno, Journal of Nanophotonics . 2007,第Null期

机译：由于氮的分布不均匀，GaInNAs / GaAs量子阱中激子局域态的近红外近场光致发光成像光谱
4. Coexistence in photoluminescence of free exciton and bound exciton in low nitrogen content GaInNAs layers [C] . R. Intartaglia, T. Taliercio, B. Gil, International conference on nitride semiconductors . 2003

机译：在低氮含量增益层中的自由激子和结合激子的光致发光共存
5. Energy Level Structure of Free Excitons in 4H SiC from Wavelength Modulated Absorption Spectroscopy and Low Temperature Photoluminescence [D] . Klahold, Walter. 2018

机译：波长调制吸收光谱和低温光致发光研究4H SiC中自由激子的能级结构
6. Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound charged and free excitons [O] . Sefaattin Tongay, Joonki Suh, Can Ataca, -1

机译：破坏二维半导体中的活化光致发光：结合的带电的和自由的激子之间的相互作用
7. Extremely uniform bound exciton states in nitrogen δ-doped GaAs studied by photoluminescence spectroscopy in external magnetic fields [O] . Harada Yukihiro, Kubo Terutada, Inoue Tomoya, 2011

机译：外部磁场中光致发光光谱研究氮δ掺杂GaAs中的极均匀束缚激子态

Coexistence in photoluminescence of free exciton and bound exciton in low nitrogen content GaInNAs layers

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