Characterization of recombination processes in GaN by cathodoluminescence in-depth spectroscopy

机译：阴极发光深度光谱法表征GaN中的重组过程

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Cathodoluminescence in-depth spectroscopy (CLIS) study was made at room temperature on a thick GaN sample. In experiments, CLIS spectra for near band edge (NBE) emission and yellow luminescence (YL) were observed, and their theoretical spectra were calculated on computer. The comparison between theory and experiment indicated that the YL center is a deep acceptor which is spatially uniformly distributed within the GaN layer, that surface recombination plays an important role in the overall recombination statistics, and that the major non-radiative recombination process is that of high density excitons even at room temperature.

机译：在室温下对厚GaN样品进行了阴极发光深度光谱（CLIS）研究。在实验中，观察到了近频带边缘（NBE）发射和黄光（YL）的CLIS光谱，并在计算机上计算了它们的理论光谱。理论和实验的比较表明，YL中心是一个深受体，在空间上均匀地分布在GaN层中，表面重组在整个重组统计中起着重要的作用，主要的非辐射重组过程是高密度激子，即使在室温下也是如此。

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来源
《International Conference on Nitride Semiconductors(ICNS-5); 20030525-20030530; Nara; JP》|2003年|P.2707-2711|共5页
会议地点 Nara(JP);Nara(JP)
作者
F. Ishikawa; H. Hasegawa;
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作者单位

Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Electronics and Information Engineering, Hokkaido University, N-13 W-8, Sapporo 060-8628, Japan;

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原文格式 PDF
正文语种 eng
中图分类化合物半导体;
关键词
III-V semiconductors; theory, models, and numerical simulation; cathodoluminescence, ionoluminescence;

机译：III-V半导体;理论，模型和数值模拟;阴极发光，电致发光;

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专利

1. Cathodoluminescence in-depth spectroscopy study of AlGaN/GaN heterostructures [J] . Fumitaro Ishikawa, Hideki Hasegawa Applied Surface Science . 2003,第May期

机译：AlGaN / GaN异质结构的阴极发光深度光谱研究
2. Cathodoluminescence in-depth spectroscopy study of yellow luminescence in GaN [J] . Fumitaro Ishikawa, Hideki Hasegawa 電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials . 2002,第641期

机译：GaN中黄光的阴极发光深度光谱研究
3. Cathodoluminescence in-depth spectroscopy study of yellow luminescence in GaN [J] . Fumitaro Ishikawa, Hideki Hasegawa 電子情報通信学会技術研究報告. 電子デバイス. Electron Devices . 2002,第639期

机译：GaN中黄光的阴极发光深度光谱研究
4. Characterization of recombination processes in GaN by cathodoluminescence in-depth spectroscopy [C] . F. Ishikawa, H. Hasegawa International conference on nitride semiconductors . 2003

机译：深入光谱分辨率的阴离子发光的GaN中重组过程的表征
5. Characterization of charge injection processes of thin films on indium tin oxide electrodes using a novel spectroelectrochemical technique: Potential-modulated attenuated total reflectance spectroscopy. [D] . Araci, Zeynep Ozkan. 2010

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6. Cathodoluminescence and Cross-sectional Transmission Electron Microscopy Studies for Deformation Behaviors of GaN Thin Films Under Berkovich Nanoindentation [O] . Sheng-Rui Jian, I-Ju Teng, Jian-Ming Lu 2008

机译：阴极发光和截面透射电镜研究Berkovich纳米压痕下GaN薄膜的形变行为
7. Novel Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Recombination Dynamics in GaN and GaN Based Heterostructures [O] . Sonderegger, S., Corfdir, P., Balet, L., 2017

机译：新型皮秒时间分辨阴极发光，用于探测GaN和基于GaN的异质结构中的激子复合动力学

Characterization of recombination processes in GaN by cathodoluminescence in-depth spectroscopy

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