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首页> 外文会议>International Conference on Real-Time and Embedded Computing Systems and Applications(RTCSA 2003); 20030218-20030220; Tainan City; CT >An Efficient B-Tree Layer for Flash-Memory Storage Systems
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An Efficient B-Tree Layer for Flash-Memory Storage Systems

机译：闪存存储系统的高效B树层

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摘要

With a significant growth of the markets for consumer electronics and various embedded systems, flash memory is now an economic solution for storage systems design. For index structures which require intensively fine-grained updates/modifications, block-oriented access over flash memory could introduce a significant number of redundant writes. It might not only severely degrade the overall performance but also damage the reliability of flash memory. In this paper, we propose a very different approach which could efficiently handle fine-grained updates/modifications caused by B-Tree index access over flash memory. The implementation is done directly over the flash translation layer (FTL) such that no modifications to existing application systems are needed. We demonstrate that the proposed methodology could significantly improve the system performance and, at the same time, reduce the overheads of flash-memory management and the energy dissipation, when index structures are adopted over flash memory.
机译：随着消费电子产品和各种嵌入式系统市场的显着增长，闪存现在已成为存储系统设计的经济解决方案。对于需要密集细粒度的更新/修改的索引结构，通过闪存进行的面向块的访问可能会引入大量的冗余写入。这不仅会严重降低整体性能，而且还会损坏闪存的可靠性。在本文中，我们提出了一种非常不同的方法，该方法可以有效处理由B-Tree索引访问闪存引起的细粒度更新/修改。该实现直接在闪存转换层（FTL）上完成，因此无需对现有应用程序系统进行任何修改。我们证明，当在闪存上采用索引结构时，所提出的方法可以显着提高系统性能，同时减少闪存管理和能源消耗的开销。

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