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首页> 外文期刊>ACM Transactions on Embedded Computing Systems >A Reliability Enhancement Design under the Flash Translation Layer for MLC-Based Flash-Memory Storage Systems
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A Reliability Enhancement Design under the Flash Translation Layer for MLC-Based Flash-Memory Storage Systems

机译：基于MLC的闪存存储系统的闪存转换层下的可靠性增强设计

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摘要

Although flash memory has gained very strong momentum in the storage market, the reliability of flash-memory chips has been dropped significantly in the past years. This article presents a reliability enhancement design under the flash management layer (i.e., flash translation layer) to address this concern so as to reduce the design complexity of flash-memory management software/firmware and to improve the maintainability and portability of existing and future products. In particular, a log-based write strategy with a hash-based caching policy is proposed to provide extra ECC redundancy and performance improvement. Strategies for bad block management are also presented. The failure rate of flash-memory storage systems is analyzed with the considerations of bit errors. The proposed design is later evaluated by a series of experiments based on realistic traces. It was shown that the proposed approach could significantly improve the reliability of flash memory with very limited system overheads.
机译：尽管闪存在存储市场中获得了非常强劲的势头，但是在过去的几年中，闪存芯片的可靠性已大大下降。本文提出了闪存管理层（即闪存转换层）下的可靠性增强设计，以解决此问题，从而降低闪存管理软件/固件的设计复杂性，并提高现有和未来产品的可维护性和可移植性。 。特别是，提出了一种基于日志的写策略和基于散列的缓存策略，以提供额外的ECC冗余和性能改进。还介绍了坏块管理策略。考虑到位错误，分析了闪存存储系统的故障率。稍后通过基于真实轨迹的一系列实验对提出的设计进行评估。结果表明，所提出的方法可以显着提高闪存的可靠性，而系统开销却非常有限。

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