Electrical Characterization of Ce doped ZnS:TbOF Electroluminescent Thin Films

机译：Ce掺杂ZnS：TbOF电致发光薄膜的电学表征

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Ce co-doping improves the radiative emission efficiency leading to improved performance of Ce codoped film. In addition, modified space charge in the phosphor film increases the internal field and improves the excitation efficiency.

机译：Ce共掺杂可提高辐射发射效率，从而改善Ce共掺杂膜的性能。另外，磷光体膜中改性的空间电荷增加了内部电场并提高了激发效率。

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《International Conference on the Science and Technology of Emissive Displays and Lighting: Extended Abstracts; 20011112-14; San Diego,CA(US)》|2001年|P.155-158|共4页
会议地点 San DiegoCA(US)
作者
J. P. Kim; M. R. Davidson; P. H. Holloway;
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Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611-6400;

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正文语种 eng
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1. The study of crystallinity of ZnS:TbOF thin films and green thin-film electroluminescent devices with different stacked insulating layers [J] . S. H. Su, S. X. Chen, M. Yokoyama, Journal of the Society for Information Display . 1996,第4期

机译：不同堆叠绝缘层的ZnS：TbOF薄膜和绿色薄膜电致发光器件的结晶度研究
2. Addition of He to Ar during sputter deposition of electroluminescent ZnS:TbOF thin films [J] . J. P. Kim, M. R. Davidson, P. H. Holloway Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structure . 2003,第5期

机译：溅射沉积电致发光ZnS：TbOF薄膜中的He中的Ar
3. The relation between luminous properties and oxygen content in ZnS:TbOF thin-film electroluminescent devices fabricated by radio-frequency magnetron sputtering method [J] . Wang C.W., Liao J.Y. IEEE Transactions on Electron Devices . 1998,第4期

机译：射频磁控溅射法制备的ZnS：TbOF薄膜电致发光器件中发光性能与氧含量的关系
4. Electrical Characterization of Ce doped ZnS:TbOF Electroluminescent Thin Films [C] . J. P. Kim, M. R. Davidson, P. H. Holloway International Conference on the Science and Technology of Emissive Displays and Lighting . 2001

机译：Ce掺杂ZnS的电气表征：TBOF电致发光薄膜
5. Growth and characterization of phosphorus-doped diamond films: Effects of doping, electrical characterization, EBIC characterization of interfaces and some device applications [D] . Roychoudhury, Rajat 1997

机译：掺磷金刚石薄膜的生长和表征：掺杂，电学表征，界面的EBIC表征和某些器件应用的影响
6. Using Cu–Zn–Sn–O Precursor to Optimize CZTSSe Thin Films Fabricated by Se Doping With CZTS Thin Films [O] . Qian Li, Jinpeng Hu, Yaru Cui, 2021

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7. Electrical characterization and aging studies of green ZnS: Tb AC thin-film electroluminescent devices [O] . 1994

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8. Electrical Characterization of Atomic Layer Epitaxy ZnS:Mn Alternating-Current Thin-Film Electroluminescent Devices Subject of Various Waveforms. (Reannouncement with New Availability Information). [R] . Abu-Dayah, A., Wager, J. F., Kobayashi, S. 1993

机译：原子层外延Zns：mn交流薄膜电致发光器件的电特性研究。（重新公布新的可用性信息）。

Electrical Characterization of Ce doped ZnS:TbOF Electroluminescent Thin Films

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