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首页> 外文会议>International Conference on Silicon Carbide and Related Materials 2001 Pt.1 Oct 28-Nov 2, 2001 Tsukuba, Japan >SiO_2 as Oxygen Source for the Chemical Vapor Transport of SiC
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SiO_2 as Oxygen Source for the Chemical Vapor Transport of SiC

机译：SiO_2作为SiC化学气相迁移的氧源

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摘要

The potential of oxygen as a transporting agent for the growth of SiC epitaxial layers was studied by a thermodynamic simulation coupled with experiments in a sublimation like reactor. The calculations show that SiO and CO gaseous species are the main transporting species and they both form on a wide range of temperature. Simulation of a thermal gradient reveals that SiC transport is possible for temperatures higher than 1950 K. Experiments performed with silica powder as a source of oxygen mixed with SiC powder confirm the possibility to grow SiC layers at higher pressure than the sublimation technique. Moreover, the addition of silica was found to be interesting to suppress the graphitisation of the SiC source.
机译：通过热力学模拟和升华式反应器中的实验，研究了氧作为SiC外延层生长的传输剂的潜力。计算结果表明，SiO和CO气态物质是主要的传输物质，它们都在很宽的温度范围内形成。热梯度的模拟表明，在高于1950 K的温度下，SiC的传输是可能的。用二氧化硅粉作为氧源与SiC粉混合进行的实验证实，与升华技术相比，可以在更高的压力下生长SiC层。此外，发现添加二氧化硅对于抑制SiC源的石墨化是令人感兴趣的。

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