Photoluminescence Investigation of Hydrogen Interaction with Defects in SiC

机译：SiC中氢与缺陷相互作用的光致发光研究

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Interaction of hydrogen with Al acceptors and lattice damage related defects in SiC is investigated using low-temperature photoluminescence (PL) spectroscopy. Appearance of H-related PL peaks after hydrogenation is accompanied with a significant reduction in the relative intensity of Al bound exciton (Al-BE) PL. Another effect of hydrogenation is a passivation of lattice damage related emission D_Ⅰ. Earlier reported gradual quenching of remaining Al-BE photoluminescence in hydrogenated samples under excitation with above band-gap light was investigated at different temperatures. A possible mechanism of the Al-BE quenching at low temperatures and its possible connection with the usually limited degree of Al electrical passivation are discussed.

机译：使用低温光致发光（PL）光谱研究了氢与Al受体的相互作用以及SiC中与晶格损伤相关的缺陷。氢化后H相关PL峰的出现伴随着Al结合激子（Al-BE）PL的相对强度的显着降低。氢化的另一个作用是钝化与晶格损伤有关的发射D_Ⅰ。早先报道了在不同温度下用上述带隙光激发下氢化样品中剩余的Al-BE光致发光的逐步淬灭。讨论了Al-BE低温淬火的可能机理及其与通常有限程度的Al电钝化的可能联系。

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来源
《International Conference on Silicon Carbide and Related Materials 2001 Pt.1 Oct 28-Nov 2, 2001 Tsukuba, Japan》|2001年|p.609-612|共4页
会议地点 Tsukuba(JP);Tsukuba(JP)
作者
Yaroslav Koshka; Michael S. Mazzola;
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作者单位

Department of Electrical Computer Engineering, Mississippi State University, Box 9571, Mississippi State, MS 39762, USA;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
aluminum acceptor; D_Ⅰ; hydrogenation; lattice damage; passivation; photoluminescence; photoluminescence transients;

机译：铝受体;D_Ⅰ;加氢;晶格损伤;钝化;光致发光;光致发光瞬变;

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Photoluminescence Investigation of Hydrogen Interaction with Defects in SiC

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