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首页> 外文会议>International Conference on Silicon Carbide and Related Materials 2001 Pt.1 Oct 28-Nov 2, 2001 Tsukuba, Japan >Fast Growth and Doping Characteristics of α-SiC in Horizontal Cold-Wall Chemical Vapor Deposition
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Fast Growth and Doping Characteristics of α-SiC in Horizontal Cold-Wall Chemical Vapor Deposition

机译：水平冷壁化学气相沉积中α-SiC的快速生长和掺杂特性

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摘要

High-speed homoepitaxy by horizontal cold-wall chemical vapor deposition (CVD) was investigated. Improvement of initial growth condition lead to good surface morphology even with high SiH_4 flow rates. However, the growth rate was found to be saturated at 6 μm/h, the cause of which is speculated to SiH_4 polymerization. The dependencies of doping characteristics and the Z_1 center concentration on SiH_4 flow rates were investigated, which suggested that the effective C/Si ratio increases with increasing SiH_4 flow rate. These results support the above speculation, because the SiH_4 polymerization decreases the relative amount of Si species contributing to SiC growth in the reaction system, resulting in the effectively high C/Si ratio.
机译：研究了通过水平冷壁化学气相沉积（CVD）进行的高速同质外延。初始生长条件的改善即使在高SiH_4流速下也可导致良好的表面形貌。然而，发现生长速率在6μm/ h达到饱和，其原因推测为SiH_4聚合。研究了掺杂特性和Z_1中心浓度对SiH_4流量的依赖性，这表明有效的C / Si比随SiH_4流量的增加而增加。这些结果支持上述推测，因为SiH_4聚合减少了反应体系中有助于SiC生长的Si物种的相对数量，从而导致了有效的高C / Si比。

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