Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy

机译：拉曼光谱法测定碳化硅声子本征向量

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The phonon frequencies of silicon carbide (SiC) depend on the atomic masses of the constituent elements Si and C. In general, the frequency decreases, when the mass of one kind of atom is increased by isotopic substitution. Quantitatively, the shift of a phonon line in the Raman spectrum due to such a substitution depends on the phonon eigenvector of the isotopically modified constituent atom. We measure the frequency shifts for Raman active modes in SiC polytypes, when the ~(12)C-isotope is replaced by ~(13)C and calculate the absolute value of the eigenvector of the carbon sublattice from these results. With these results a validation and improvement of the force constants used in a linear-chain model to calculate phonon dispersion curves is possible.

机译：碳化硅（SiC）的声子频率取决于组成元素Si和C的原子质量。通常，当通过同位素取代增加一种原子的质量时，频率会降低。从数量上讲，由于这种取代，声子线在拉曼光谱中的移动取决于同位素修饰的组成原子的声子本征向量。当〜（12）C同位素被〜（13）C取代时，我们测量SiC多型中拉曼活性模式的频移，并从这些结果计算碳亚晶格特征向量的绝对值。利用这些结果，可以验证和改进用于计算声子色散曲线的线性链模型中的力常数。

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《International Conference on Silicon Carbide and Related Materials 2001 Pt.1 Oct 28-Nov 2, 2001 Tsukuba, Japan》|2001年|p.625-628|共4页
会议地点 Tsukuba(JP);Tsukuba(JP)
作者
B. Herzog; S. Rohmfeld; R. Puesche; M. Hundhausen; L. Ley; K. Semmelroth; G. Pensl;
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作者单位

Institut fuer Technische Physik, Universitaet Erlangen-Nuernberg, Erwin-Rommel-Str. 1, DE-91058 Erlangen, Germany;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
phonon dispersion curves; phonon eigenvectors; raman spectroscopy;

机译：声子色散曲线;声子本征向量;拉曼光谱;

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Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy

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