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首页> 外文会议>International Conference on Silicon Carbide and Related Materials 2001 Pt.1 Oct 28-Nov 2, 2001 Tsukuba, Japan >Electron-Irradiation-Induced Amorphization of 6H-SiC by 300 keV Transmission Electron Microscope Equipped with a Field-Emission Gun
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Electron-Irradiation-Induced Amorphization of 6H-SiC by 300 keV Transmission Electron Microscope Equipped with a Field-Emission Gun

机译：装备有场发射枪的300 keV透射电子显微镜对6H-SiC进行电子辐照诱导的非晶化

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摘要

Electron-irradiation induced amorphization in silicon carbide (SiC) has been investigated using transmission electron microscopy (TEM) equipped with a field-emission gun. Single crystals of 6H-SiC were irradiated with 300 keV electrons at room temperature. Electron diffraction and high-resolution TEM observations indicate that the electron-irradiated area is successfully amorphized. The present irradiation conditions are beyond those required to induce a crystal-to-amorphous phase transformation reported previously (the incident electron energy of >750 keV and the temperature of <290 K). This is attributed to the domination of damage-producing rate over the recovery rate in the electron-irradiated area due to the high electron flux associated with a field-emission gun used in this work.
机译：使用配备有场发射枪的透射电子显微镜（TEM），已经研究了碳化硅（SiC）中电子辐照引起的非晶化。在室温下用300 keV电子辐照6H-SiC单晶。电子衍射和高分辨率TEM观察表明，电子辐照区域已成功非晶化。当前的辐照条件超出了先前报道的诱导晶体向非晶相转变所需的条件（入射电子能量> 750 keV，温度<290 K）。这归因于由于与这项工作中使用的场发射枪相关的高电子通量，在电子辐照区域中，损害产生率高于恢复率。

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