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首页> 外文会议>International Conference on Silicon Carbide and Related Materials 2001 Pt.1 Oct 28-Nov 2, 2001 Tsukuba, Japan >Carrier Concentrations in Implanted and Epitaxial 4H-SiC by Scanning Spreading Resistance Microscopy
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Carrier Concentrations in Implanted and Epitaxial 4H-SiC by Scanning Spreading Resistance Microscopy

机译：扫描扩散电阻显微镜观察植入和外延4H-SiC中的载流子浓度

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摘要

Free carrier distributions in 4H-SiC have been studied by scanning spreading resistance microscopy (SSRM). The SSRM signal is discussed in relation to the chemical impurity concentration measured by secondary ion mass spectrometry (SIMS). The method is demonstrated on a p-type Al epi-layer staircase structure with doping concentration ranging from 2x10~(16) cm~(-3) to 2x10~(20) cm~(-3) and an implanted acceptor dopant profile of shallow Al and deep B. The results of the epi-layer investigation are in good agreement with the macroscopic spreading resistance model R=ρ/4r, and show a much higher dynamic range in 4H-SiC than conventional spreading resistance profiling. Measurements of the implantation profile reveal a resistance in the highly doped region (>10~(18) cm~(-3)) of more than two orders of magnitude larger than that measured in the epi-layer with similar concentration. The observation may be attributed to remaining implantation-induced defects. The SSRM measurements also show a diffusion of B consistent with SIMS data. The investigation clearly demonstrates that the technique is a valuable method to determine high gradient carrier concentrations in p-type SiC, although the detailed mechanism of the spreading resistance current is presently not completely understood.
机译：通过扫描扩展电阻显微镜（SSRM）研究了4H-SiC中的自由载流子分布。讨论了SSRM信号与通过二次离子质谱（SIMS）测量的化学杂质浓度有关的问题。在掺杂浓度范围为2x10〜（16）cm〜（-3）到2x10〜（20）cm〜（-3）的p型Al外延层阶梯结构上证明了该方法，并注入了掺杂剂的掺杂剂分布。 Epi层研究的结果与宏观扩展电阻模型R =ρ/ 4r吻合良好，并且在4H-SiC中显示的动态范围比常规扩展电阻分布图高得多。注入分布的测量表明，在高掺杂区域（> 10〜（18）cm〜（-3））中的电阻比在具有相似浓度的外延层中测量的电阻大两个数量级。该观察结果可归因于剩余的植入引起的缺陷。 SSRM测量结果还显示B与SIMS数据一致。这项研究清楚地表明，该技术是确定p型SiC中高梯度载流子浓度的有价值的方法，尽管目前尚不完全了解扩展电阻电流的详细机制。

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