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首页> 外文会议>International Conference on Silicon Carbide and Related Materials 2001 Pt.1 Oct 28-Nov 2, 2001 Tsukuba, Japan >Characterization of Inclusions in SiC Bulk Crystals Grown by Modified Lely Method
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Characterization of Inclusions in SiC Bulk Crystals Grown by Modified Lely Method

机译：改进的Lely法生长SiC块状晶体中的夹杂物

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摘要

We have investigated two types of inclusions. They were a dendrite and a transparent inclusion, which have been seldom reported. The dendrite consisted of carbon, titanium and vanadium except for silicon. It should be carbide of titanium and vanadium. The titanium and vanadium might be incorporated from the source. By using a high purity source, it is possible to prevent generation of the dendrite. The transparent inclusion was observed in the SiC bulk crystal even in the growth with the chemical treated SiC source powder. A remarkable feature of the transparent inclusion was to have a small empty core. It was considered that the core might be a trace of Si droplet caused by C/Si ratio fluctuation of sublimated gas. Therefore, the C/Si ratio during the growth should be stabilized to prevent generation of the transparent inclusions.
机译：我们研究了两种夹杂物。它们是树枝状晶体和透明夹杂物，鲜有报道。除硅外，枝晶由碳，钛和钒组成。它应该是钛和钒的碳化物。钛和钒可能从源头掺入。通过使用高纯度源，可以防止枝晶的产生。即使在经过化学处理的SiC源粉末的生长中，在SiC块状晶体中也观察到透明夹杂物。透明夹杂物的显着特征是具有小的空芯。认为该核可能是由于升华气体的C / Si比波动引起的Si滴痕迹。因此，生长期间的C / Si比应稳定，以防止透明夹杂物的产生。

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