CVD SiC Powder for High-Purity SiC Source Material

机译：用于高纯SiC原料的CVD SiC粉末

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We have developed high purity CVD-SiC powder by crushing the CVD free standing deposit mechanically. The powder has the diameter range of 200 to 1, 200 micro-meters and has sub ppm level impurity, thus enabling us to adopt it as the source material for making single crystal SiC by sublimation method. Characteristics of the powder are discussed in comparison with the powder by conventional Acheson's method.

机译：通过机械粉碎CVD静置沉积物，我们开发了高纯度CVD-SiC粉末。该粉末的直径范围为200到1,200微米，并且具有亚ppm级的杂质，因此使我们能够将其用作通过升华法制备单晶SiC的原料。与通过常规Acheson方法的粉末相比，讨论了粉末的特性。

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来源
《International Conference on Silicon Carbide and Related Materials 2001 Pt.1 Oct 28-Nov 2, 2001 Tsukuba, Japan》|2001年|p.155-158|共4页
会议地点 Tsukuba(JP);Tsukuba(JP)
作者
S. Ezaki; M. Saito; K. Ishino;
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作者单位

Mitsui Engineering Shipbuilding Co. Ltd., Tsukiji 5-6-4 Chuoku, Tokyo 104-8439, Japan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
acheson; CVD; high-purity; powder; sublimation;

机译：环氧乙烷; CVD;高纯度;粉末;升华;

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4. High quality SiC bulk growth by sublimation method using elemental Silicon and Carbon powder as SiC source materials [C] . S. Ota, T. Furusho, H. Takagi, International Conference on Silicon Carbide and Related Materials 2003 pt.1(ICSCRM 2003); 20031005-20031010; Lyon; FR . 2003

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8. Production of Fine, High-Purity, beta SiC Powder [R] . Shaffer, P. T. B. , Blakely, K. A. , Janney, M. A. 1987

机译：生产精细，高纯度βsiC粉末

CVD SiC Powder for High-Purity SiC Source Material

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